Field Stop Trench IGBT 40 A, 650 V AFGHL40T65SQD Using the novel field stop 4th generation high speed IGBT technology. AFGHL40T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in www.onsemi.com automotive application. Features AECQ101 Qualified 40 A, 650 V, Maximum Junction Temperature: T = 175C J V = 1.6 V CESat Positive Temperature Coefficient for Easy Parallel Operating High Current Capability C Low Saturation Voltage: V = 1.6 V (Typ.) I = 40 A CE(Sat) C 100% of the Parts are Tested for I (Note 2) LM Fast Switching Tight Parameter Distribution G RoHS Compliant E Typical Applications Automotive HEVEV Onboard Chargers Automotive HEVEV DCDC Converters Totem Pole Bridgeless PFC PTC G MAXIMUM RATINGS C Rating Symbol Value Unit E TO2473L CollectortoEmitter Voltage V 650 V CES CASE 340CX GatetoEmitter Voltage V 20 V GES Transient GatetoEmitter Voltage 30 MARKING DIAGRAM Collector Current (Note 1) T = 25C I 80 A C C T = 100C 40 C Pulsed Collector Current (Note 2) I 160 A LM Pulsed Collector Current (Note 3) I 160 A CM &Z&3&K AFGHL Diode Forward Current T < 25C I 80 A C F 40T65SQD (Note 1) T < 100C 20 C Pulsed Diode Maximum Forward Current I 160 A FM(2) Maximum Power Dissipation T = 25C P 238 W C D T = 100C 119 C Operating Junction T , T 55 to C J STG &Z = Assembly Plant Code / Storage Temperature Range +175 &3 = 3Digit Date Code Maximum Lead Temp. for Soldering T 300 C &K = 2Digit Lot Traceability Code L Purposes, 1/8 from case for 5 seconds AFGHL40T65SQD = Specific Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. Value limit by bond wire 2. V = 400 V, V = 15 V, I = 160 A, R = 15 , Inductive Load CC GE C G Device Package Shipping 3. Repetitive Rating: pulse width limited by max. Junction temperature AFGHL40T65SQD TO 247 3L 30 Units / Rail Semiconductor Components Industries, LLC, 2019 1 Publication Order Number: June, 2020 Rev. 2 AFGHL40T65SQD/DAFGHL40T65SQD THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal resistance junctiontocase, for IGBT R 0.63 C/W JC Thermal resistance junctiontocase, for Diode R 1.71 C/W JC Thermal resistance junctiontoambient R 40 C/W JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Collectoremitter breakdown voltage, V = 0 V, BV 650 V GE CES gateemitter shortcircuited I = 1 mA C Temperature Coefficient of V = 0 V, 0.6 V/C GE BV CES Breakdown Voltage I = 1 mA C T J Collectoremitter cutoff current, V = 0 V, I 250 A GE CES gateemitter shortcircuited V = 650 V CE Gate leakage current, collector V = 20 V, I 400 nA GE GES emitter shortcircuited V = 0 V CE ON CHARACTERISTICS Gateemitter threshold voltage V = V , I = 40 mA V 3.4 4.9 6.4 V GE CE C GE(th) Collectoremitter saturation voltage V = 15 V, I = 40 A V 1.6 2.1 V GE C CE(sat) V = 15 V, I = 40 A, T = 175C 1.95 GE C J DYNAMIC CHARACTERISTICS V = 30 V, pF Input capacitance C 2339 CE ies V = 0 V, GE Output capacitance C 61 f = 1 MHz oes Reverse transfer capacitance C 8 res V = 400 V, nC Gate charge total Q 68 CE g I = 40 A, C Gatetoemitter charge Q 13 V = 15 V ge GE Gatetocollector charge Q 16 gc SWITCHING CHARACTERISTICS, INDUCTIVE LOAD Turnon delay time T = 25C, t 15 ns C d(on) V = 400 V, CC Rise time t 10 r I = 20 A, C R = 6 , G Turnoff delay time t 70 d(off) V = 15 V, GE Inductive Load Fall time t 3 f Turnon switching loss E 0.25 mJ on Turnoff switching loss E 0.09 off Total switching loss E 0.34 ts T = 25C, ns Turnon delay time t 17 C d(on) V = 400 V, CC Rise time t 22 I = 40 A, r C R = 6 , G Turnoff delay time t 67 d(off) V = 15 V, GE Inductive Load Fall time t 31 f Turnon switching loss E 0.75 mJ on Turnoff switching loss E 0.29 off Total switching loss E 1.04 ts www.onsemi.com 2