Ordering number : ENA1406A ATP104 P-Channel Power MOSFET ATP104 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0V --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0V --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--38A 70 S DS D R (on)1 I =--38A, V =--10V 6.4 8.4 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--19A, V =--4.5V 9.6 13.5 m DS D GS Input Capacitance Ciss 3950 pF Output Capacitance Coss V =--10V, f=1MHz 880 pF DS Reverse Transfer Capacitance Crss 610 pF Turn-ON Delay Time t (on) 24 ns d Rise Time t 520 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 290 ns d Fall Time t 260 ns f Total Gate Charge Qg 76 nC Gate-to-Source Charge Qgs V =--15V, V =--10V, I =--75A 18 nC DS GS D Gate-to-Drain Miller Charge Qgd 13 nC Diode Forward Voltage V I =--75A, V =0V --1.02 --1.5 V SD S GS Switching Time Test Circuit V V = --15V DD IN 0V --10V I = --38A D V IN R =0.39 L D V OUT PW=10s D.C.1% G ATP104 P.G 50 S Ordering Information Device Package Shipping memo ATP104-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1406-2/7