ATP404-H-TL-H ON Semiconductor

Ordering number : ENA1405A ATP404 N-Channel Power MOSFET ATP404 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 60 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =60V, V =0V 10 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transfer Admittance yfs V =10V, I =48A 100 S DS D R (on)1 I =48A, V =10V 5.5 7.2 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =48A, V =4.5V 7.5 10.5 m DS D GS Input Capacitance Ciss 6400 pF Output Capacitance Coss V =20V, f=1MHz 490 pF DS Reverse Transfer Capacitance Crss 380 pF Turn-ON Delay Time t (on) 53 ns d Rise Time t 640 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 380 ns d Fall Time t 520 ns f Total Gate Charge Qg 120 nC Gate-to-Source Charge Qgs V =30V, V =10V, I =95A 25 nC DS GS D Gate-to-Drain Miller Charge Qgd 25 nC Diode Forward Voltage V I =95A, V =0V 0.95 1.2 V SD S GS Switching Time Test Circuit Avalanche Resistance Test Circuit V V =30V DD IN 10V L 0V I =48A D 50 V IN R =0.625 L D V OUT ATP404 PW=10s D.C.1% 10V V 50 DD 0V G ATP404 P.G 50 S Ordering Information Device Package Shipping memo ATP404-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1405-2/7