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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.BAV19 / BAV20 / BAV21
BAV19 / 20 / 21
DO-35
Color Band Denotes Cathode
Small Signal Diode
Absolute Maximum Ratings* T = 25C unless otherwise noted
A
Symbol Parameter Value Units
V Maximum Repetitive Reverse Voltage BAV19 120 V
RRM
200 V
BAV20
BAV21 250 V
I Average Rectified Forward Current 200 mA
F(AV)
I Non-repetitive Peak Forward Surge Current
FSM
Pulse Width = 1.0 second 1.0 A
Pulse Width = 1.0 microsecond 4.0 A
Storage Temperature Range -65 to +200
T C
stg
Operating Junction Temperature 175 C
T
J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol Parameter Value Units
P Power Dissipation 500 mW
D
Thermal Resistance, Junction to Ambient 300
R C/W
JA
Electrical Characteristics T = 25C unless otherwise noted
A
Symbol Parameter Test Conditions Min Max Units
V Breakdown Voltage BAV19 120 V
I = 100 A
R R
BAV20 200 V
I = 100 A
R
250 V
BAV21
I = 100 A
R
V Forward Voltage I = 100 mA 1.0 V
F F
I = 200 mA 1.25 V
F
I Reverse Current V = 100 V 100 nA
R R
100
BAV19 V = 100 V, T = 150C A
R A
V = 150 V 100 nA
R
BAV20 100
V = 150 V, T = 150C A
R A
100
V = 200 V nA
R
BAV21 100
V = 200 V, T = 150C A
R A
C Total Capacitance V = 0, f = 1.0 MHz 5.0 pF
T R
t Reverse Recovery Time I = I = 30 mA, I = 3.0 mA, 50 ns
rr F R RR
R = 100
L
2001 Fairchild Semiconductor Corporation BAV19/20/21, Rev. C