BAV70 ON Semiconductor

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BAV70 / 74 BAV70 / 74 Connection Diagram 3 3 3 A4 2 12 MARKING 1 1 2 BAV70 A4 BAV74 JA SOT-23 Small Signal Diode Absolute Maximum Ratings * T = 25C unless otherwise noted A Symbol Parameter Value Units V Maximum Repetitive Reverse Voltage BAV70 70 V RRM BAV74 50 V I Average Rectified Forward Current 200 mA F(AV) I Non-repetitive Peak Forward Surge Current FSM Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 2.0 A T Storage Temperature Range -55 to +150 C STG T Operating Junction Temperature 150 C J * These ratings are limiting values above which the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 350 mW D R Thermal Resistance, Junction to Ambient 357 C/W JA Electrical Characteristics T =25C unless otherwise noted A Symbol Parameter Test Conditions Min. Max. Units V Breakdown Voltage BAV70 I = 100 A 75 V R R BAV74 I = 5.0 A 50 V R V Forward Voltage BAV70 I = 1.0mA 715 mV F F I = 10mA 855 mV F I = 50mA 1.0 V F I = 150mA 1.25 V F BAV74 I = 100mA 1.0 V F I Reverse Leakage BAV70 V = 25V, T = 150C 60 A R R A V = 70V 5.0 A R V = 70V, T = 150C 100 A R A BAV74 V = 50V 100 nA R V = 50V, T = 150C 100 A R A C Total Capacitance BAV70 V = 0V, f = 1.0MHz 1.5 pF T R BAV74 V = 0V, f = 1.0MHz 2.0 pF R t Reverse Recovery Time BAV70 I = I = 10mA, I = 1.0mA, 6.0 ns rr F R RR R = 100 L BAV74 I = I = 10mA, I = 1.0mA, 4.0 ns F R RR = 100 R L 2004 Fairchild Semiconductor Corporation BAV70 / 74, Rev. D1