BC639-16ZL1G ON Semiconductor

BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features These are PbFree Devices* BC637, BC639, BC639 16 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 10 Adc, I = 0) BC637 60 C B BC639 80 Collector Emitter ZeroGate Breakdown Voltage(Note 1) V Vdc (BR)CES (I = 100 Adc, I = 0) BC639 16 120 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) BC637 60 C E BC639 80 Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I CBO (V = 30 Vdc, I = 0) 100 nAdc CB E (V = 30 Vdc, I = 0, T = 125C) 10 Adc CB E A ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 5.0 mAdc, V = 2.0 Vdc) 25 C CE (I = 150 mAdc, V = 2.0 Vdc) BC637 40 160 C CE BC639 40 160 BC639 16ZLT1 100 250 (I = 500 mA, V = 2.0 V) 25 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.5 C B Base Emitter On Voltage V Vdc BE(on) (I = 500 mAdc, V = 2.0 Vdc) 1.0 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 50 mAdc, V = 2.0 Vdc, f = 100 MHz) 200 C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 1.0 MHz) 7.0 CB E Input Capacitance C pF ib (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 50 EB C 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ORDERING INFORMATION Device Package Shipping BC637G TO92 5000 Units / Bulk (Pb Free) BC637RL1G TO92 2000 / Tape & Reel (Pb Free) BC639G TO92 5000 Units / Bulk (Pb Free) BC639RL1G TO92 2000 / Tape & Reel (Pb Free) BC639ZL1G TO92 2000 / Ammo Box (Pb Free) BC639 16ZL1G TO92 2000 / Ammo Box (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.