DATA SHEET www.onsemi.com General Purpose COLLECTOR Transistors 3 NPN Silicon 1 BASE BC817-16L, SBC817-16L, 2 BC817-25L, SBC817-25L, EMITTER BC817-40L, SBC817-40L Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 AECQ101 Qualified and PPAP Capable 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 Compliant CASE 318 STYLE 6 MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 45 V CEO 6x M Collector Base Voltage V 50 V CBO Emitter Base Voltage V 5.0 V 1 EBO Collector Current Continuous I 500 mAdc C 6x = Device Code THERMAL CHARACTERISTICS x = A, B, or C M = Date Code* Characteristic Symbol Max Unit =PbFree Package Total Device Dissipation FR5 Board, P D (Note: Microdot may be in either location) (Note 1) T = 25C 225 mW A *Date Code orientation and/or overbar may Derate above 25C 1.8 mW/C vary depending upon manufacturing location. Thermal Resistance, R 556 C/W JA JunctiontoAmbient ORDERING INFORMATION Total Device Dissipation P D See detailed ordering and shipping information in the package Alumina Substrate, (Note 2) dimensions section on page 2 of this data sheet. T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance, R 417 C/W JA JunctiontoAmbient Junction and Storage Temperature T , T 65 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: October, 2021 Rev. 17 BC81716LT1/DBC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V 45 V (BR)CEO (I = 10 mA) C Collector Emitter Breakdown Voltage V 50 V (BR)CES (V = 0, I = 10 A) EB C Emitter Base Breakdown Voltage V 5.0 V (BR)EBO (I = 1.0 A) E Collector Cutoff Current I CBO (V = 20 V) 100 nA CB (V = 20 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC81716, SBC81716 100 250 C CE BC81725, SBC81725 160 400 BC81740, SBC81740 250 600 (I = 500 mA, V = 1.0 V) 40 C CE Collector Emitter Saturation Voltage V 0.7 V CE(sat) (I = 500 mA, I = 50 mA) C B Base Emitter On Voltage V 1.2 V BE(on) (I = 500 mA, V = 1.0 V) C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping BC81716LT1G 3000 / Tape & Reel NSVBC81716LT1G SOT23 6A (PbFree) BC81716LT3G 10,000 / Tape & Reel SBC81716LT3G BC81725LT1G 3000 / Tape & Reel SBC81725LT1G SOT23 6B (PbFree) BC81725LT3G 10,000 / Tape & Reel SBC81725LT3G BC81740LT1G 3000 / Tape & Reel SBC81740LT1G SOT23 6C (PbFree) BC81740LT3G 10,000 / Tape & Reel SBC81740LT3G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2