BC817-25LT1G ON Semiconductor

BC817-25LT1G electronic component of ON Semiconductor
BC817-25LT1G ON Semiconductor
BC817-25LT1G Bipolar Transistors - BJT
BC817-25LT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC817-25LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC817-25LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC817-25LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 500mA 50V NPN
Datasheet: BC817-25LT1G Datasheet (PDF)
Price (USD)
12000: USD 0.0251 ea
Line Total: USD 301.2 
Availability : 1230930
  
Ship by Mon. 27 Oct to Fri. 31 Oct
QtyUnit Price
12000$ 0.0251
12000$ 0.0241
15000$ 0.0208
24000$ 0.0146

Availability 145500
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.028
9000$ 0.0229
27000$ 0.022
51000$ 0.0219
102000$ 0.0217
150000$ 0.0207
252000$ 0.0198
501000$ 0.0192


Availability 2877
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.182
10$ 0.1302
50$ 0.0868
100$ 0.0728
500$ 0.049


Availability 30225
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 20
Multiples : 20
QtyUnit Price
20$ 0.0606
200$ 0.0466
600$ 0.029
3000$ 0.0198
9000$ 0.0171
21000$ 0.0158


Availability 38379
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 13275
Multiples : 1
QtyUnit Price
13275$ 0.0354
100000$ 0.0295


Availability 1230930
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.0251
12000$ 0.0241
15000$ 0.0208
24000$ 0.0146


Availability 145500
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0363
9000$ 0.0291
27000$ 0.0265
51000$ 0.0263
102000$ 0.0261

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC817-25LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC817-25LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DATA SHEET www.onsemi.com General Purpose COLLECTOR Transistors 3 NPN Silicon 1 BASE BC817-16L, SBC817-16L, 2 BC817-25L, SBC817-25L, EMITTER BC817-40L, SBC817-40L Features 3 S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 AECQ101 Qualified and PPAP Capable 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 Compliant CASE 318 STYLE 6 MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V 45 V CEO 6x M Collector Base Voltage V 50 V CBO Emitter Base Voltage V 5.0 V 1 EBO Collector Current Continuous I 500 mAdc C 6x = Device Code THERMAL CHARACTERISTICS x = A, B, or C M = Date Code* Characteristic Symbol Max Unit =PbFree Package Total Device Dissipation FR5 Board, P D (Note: Microdot may be in either location) (Note 1) T = 25C 225 mW A *Date Code orientation and/or overbar may Derate above 25C 1.8 mW/C vary depending upon manufacturing location. Thermal Resistance, R 556 C/W JA JunctiontoAmbient ORDERING INFORMATION Total Device Dissipation P D See detailed ordering and shipping information in the package Alumina Substrate, (Note 2) dimensions section on page 2 of this data sheet. T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance, R 417 C/W JA JunctiontoAmbient Junction and Storage Temperature T , T 65 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: October, 2021 Rev. 17 BC81716LT1/DBC81716L, SBC81716L, BC81725L, SBC81725L, BC81740L, SBC81740L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V 45 V (BR)CEO (I = 10 mA) C Collector Emitter Breakdown Voltage V 50 V (BR)CES (V = 0, I = 10 A) EB C Emitter Base Breakdown Voltage V 5.0 V (BR)EBO (I = 1.0 A) E Collector Cutoff Current I CBO (V = 20 V) 100 nA CB (V = 20 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC81716, SBC81716 100 250 C CE BC81725, SBC81725 160 400 BC81740, SBC81740 250 600 (I = 500 mA, V = 1.0 V) 40 C CE Collector Emitter Saturation Voltage V 0.7 V CE(sat) (I = 500 mA, I = 50 mA) C B Base Emitter On Voltage V 1.2 V BE(on) (I = 500 mA, V = 1.0 V) C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping BC81716LT1G 3000 / Tape & Reel NSVBC81716LT1G SOT23 6A (PbFree) BC81716LT3G 10,000 / Tape & Reel SBC81716LT3G BC81725LT1G 3000 / Tape & Reel SBC81725LT1G SOT23 6B (PbFree) BC81725LT3G 10,000 / Tape & Reel SBC81725LT3G BC81740LT1G 3000 / Tape & Reel SBC81740LT1G SOT23 6C (PbFree) BC81740LT3G 10,000 / Tape & Reel SBC81740LT3G For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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