BC847BDW1T1G ON Semiconductor

BC847BDW1T1G electronic component of ON Semiconductor
BC847BDW1T1G ON Semiconductor
BC847BDW1T1G Bipolar Transistors - BJT
BC847BDW1T1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC847BDW1T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847BDW1T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC847BDW1T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT 100mA 50V Dual NPN
Datasheet: BC847BDW1T1G Datasheet (PDF)
Price (USD)
9000: USD 0.0428 ea
Line Total: USD 385.2 
Availability : 596550
  
Ship by Wed. 27 Aug to Tue. 02 Sep
QtyUnit Price
9000$ 0.0428
12000$ 0.023
12000$ 0.0222
15000$ 0.022
21000$ 0.021
30000$ 0.0209

Availability 145500
Ship by Wed. 27 Aug to Tue. 02 Sep
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.0236
9000$ 0.0235
27000$ 0.0231
51000$ 0.023
102000$ 0.0229
150000$ 0.0227
252000$ 0.0226
501000$ 0.0225


Availability 3649
Ship by Wed. 27 Aug to Tue. 02 Sep
MOQ : 1786
Multiples : 1
QtyUnit Price
1786$ 0.1456
2907$ 0.0895


Availability 18003
Ship by Wed. 03 Sep to Mon. 08 Sep
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.0702
100$ 0.0536
300$ 0.0454
3000$ 0.0265
6000$ 0.0231
9000$ 0.0215


Availability 197880
Ship by Wed. 27 Aug to Tue. 02 Sep
MOQ : 13275
Multiples : 1
QtyUnit Price
13275$ 0.0354
100000$ 0.0295


Availability 145500
Ship by Wed. 27 Aug to Tue. 02 Sep
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0306
9000$ 0.0299
27000$ 0.0277
51000$ 0.0276
102000$ 0.0275


Availability 58200
Ship by Wed. 27 Aug to Tue. 02 Sep
MOQ : 9260
Multiples : 1
QtyUnit Price
9260$ 0.0281


Availability 3249
Ship by Mon. 25 Aug to Wed. 27 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.238
10$ 0.1596
50$ 0.105
100$ 0.0868
407$ 0.0476


Availability 596550
Ship by Wed. 27 Aug to Tue. 02 Sep
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0428
12000$ 0.023
12000$ 0.0222
15000$ 0.022
21000$ 0.021
30000$ 0.0209


Availability 1440450
Ship by Wed. 27 Aug to Tue. 02 Sep
MOQ : 12000
Multiples : 3000
QtyUnit Price
12000$ 0.0217


Availability 93120
Ship by Wed. 27 Aug to Tue. 02 Sep
MOQ : 13275
Multiples : 1
QtyUnit Price
13275$ 0.0354
100000$ 0.0295

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the BC847BDW1T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847BDW1T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The BC847BDW1T1G is a general-purpose low-power NPN bipolar junction transistor (BJT) produced by ON Semiconductor. It is intended for small-signal amplification and switching applications. The device is an enhancement-mode transistor with an NPN silicon epitaxial base and PNPN device structure. It has a maximum collector current of 200 mA and a maximum collector-emitter voltage of 70 volts. The device is lead (Pb)-free and RoHS compliant. The package type of the device is SC-89, which is a small outline plastic package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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