X-On Electronics has gained recognition as a prominent supplier of BCP53-16T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCP53-16T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCP53-16T1G ON Semiconductor

BCP53-16T1G electronic component of ON Semiconductor
BCP53-16T1G ON Semiconductor
BCP53-16T1G Bipolar Transistors - BJT
BCP53-16T1G  Semiconductors

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See Product Specifications
Part No. BCP53-16T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 80 V 1.5 A 50MHz 1.5 W Surface Mount SOT-223 (TO-261)
Datasheet: BCP53-16T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.135 ea
Line Total: USD 135 
Availability - 14550
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
14550
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 1000
Multiples : 1000
1000 : USD 0.135
3000 : USD 0.1305
5000 : USD 0.1293
8000 : USD 0.1273
25000 : USD 0.1256
50000 : USD 0.125
100000 : USD 0.1244
150000 : USD 0.1237

140
Ship by Tue. 24 Jun to Fri. 27 Jun
MOQ : 5
Multiples : 5
5 : USD 0.4736
50 : USD 0.3728
150 : USD 0.2225
1000 : USD 0.1674
2000 : USD 0.1512
5000 : USD 0.1415

216915
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 0.4225
10 : USD 0.2763
100 : USD 0.192
250 : USD 0.176
500 : USD 0.1518
1000 : USD 0.1397
2000 : USD 0.1298
5000 : USD 0.1298
10000 : USD 0.1287

853
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 0.658
10 : USD 0.3864
50 : USD 0.3094
89 : USD 0.21
244 : USD 0.1988

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCP53-16T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCP53-16T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT223 package which is designed for medium power surface mount applications. www.onsemi.com High Current NPN Complement is BCP56 MEDIUM POWER HIGH The SOT223 Package can be soldered using wave or reflow. CURRENT SURFACE MOUNT The formed leads absorb thermal stress during soldering, eliminating PNP TRANSISTORS the possibility of damage to the die COLLECTOR 2, 4 Device Marking: BCP53T1G = AH BCP5310T1G = AH10 1 BCP5316T1G = AH16 BASE S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 EMITTER 3 Qualified and PPAP Capable MARKING DIAGRAM These Devices are PbFree, Halogen Free/BFR Free and are RoHS 4 Compliant 1 AYW 2 3 XXXXX MAXIMUM RATINGS (T = 25C unless otherwise noted) SOT223 C CASE 318E Rating Symbol Value Unit 1 STYLE 1 CollectorEmitter Voltage V 80 Vdc A = Assembly Location CEO Y = Year CollectorBase Voltage V 100 Vdc CBO W = Work Week XXXXX = Specific Device Code EmitterBase Voltage V 5.0 Vdc EBO = PbFree Package Collector Current I 1.5 Adc C (Note: Microdot may be in either location) Total Power Dissipation P D T = 25C (Note 1) 1.5 W A ORDERING INFORMATION Derate above 25C 12 mW/C Device Package Shipping Operating and Storage T , T 65 to +150 C J stg Temperature Range BCP53T1G SOT223 1000/Tape & Reel (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the SBCP5310T1G SOT223 1000/Tape & Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (PbFree) 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. BCP5310T1G SOT223 1000/Tape & Reel x 0.059 in. mounting pad for the collector lead min. 0.93 sq. in. (PbFree) SBCP5310T1G SOT223 1000/Tape & Reel THERMAL CHARACTERISTICS (PbFree) Characteristic Symbol Max Unit BCP5316T1G SOT223 1000/Tape & Reel Thermal Resistance, JunctiontoAmbient R 83.3 C/W (PbFree) JA (Surface Mounted) SBCP5316T1G SOT223 1000/Tape & Reel (PbFree) Lead Temperature for Soldering, T L 0.0625 from case 260 C BCP5316T3G SOT223 4000/Tape & Reel Time in Solder Bath 10 s (PbFree) NSVBCP5316T3G SOT223 4000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2018 Rev. 13 BCP53T1/DBCP53 Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 100 C E CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 80 C B CollectorEmitter Breakdown Voltage V Vdc (BR)CER (I = 100 Adc, R = 1.0 k ) 100 C BE EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C CollectorBase Cutoff Current I nAdc CBO (V = 30 Vdc, I = 0) 100 CB E EmitterBase Cutoff Current I nAdc EBO (V = 5.0 Vdc, I = 0) 100 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 5.0 mAdc, V = 2.0 Vdc) C CE All Part Types 25 (I = 150 mAdc, V = 2.0 Vdc) C CE BCP53, SBCP53 40 250 BCP5310, SBCP5310 63 160 BCP5316, SBCP5316, NSVBCP5316 100 250 (I = 500 mAdc, V = 2.0 Vdc) C CE All Part Types 25 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 500 mAdc, V = 2.0 Vdc) 1.0 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 35 MHz) 50 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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