X-On Electronics has gained recognition as a prominent supplier of BCP69T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCP69T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BCP69T1G ON Semiconductor

BCP69T1G electronic component of ON Semiconductor
BCP69T1G ON Semiconductor
BCP69T1G Bipolar Transistors - BJT
BCP69T1G  Semiconductors

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See Product Specifications
Part No. BCP69T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT 1A 20V PNP
Datasheet: BCP69T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 0.1387 ea
Line Total: USD 138.7 
Availability - 9700
Ship by Thu. 19 Jun to Wed. 25 Jun
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
9700
Ship by Thu. 19 Jun to Wed. 25 Jun
MOQ : 1000
Multiples : 1000
1000 : USD 0.1387
3000 : USD 0.1343
5000 : USD 0.1329
8000 : USD 0.1305
25000 : USD 0.128
50000 : USD 0.1274
100000 : USD 0.1268
150000 : USD 0.1261

174
Ship by Thu. 26 Jun to Tue. 01 Jul
MOQ : 5
Multiples : 5
5 : USD 0.558
50 : USD 0.33
150 : USD 0.2628
1000 : USD 0.2185
2000 : USD 0.1995
5000 : USD 0.1882

4
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 0.574
10 : USD 0.4536
50 : USD 0.3612
100 : USD 0.322
127 : USD 0.147

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the BCP69T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCP69T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT 223 package, which is designed for medium power surface BCP69T1G, NSVBCP69T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 100 Adc, I = 0) V 25 Vdc C E (BR)CES CollectorEmitter Breakdown Voltage (I = 1.0 mAdc, I = 0) V 20 Vdc C B (BR)CEO EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) V 5.0 Vdc E C (BR)EBO CollectorBase Cutoff Current (V = 25 Vdc, I = 0) I 10 Adc CB E CBO EmitterBase Cutoff Current (V = 5.0 Vdc, I = 0) I 10 Adc EB C EBO ON CHARACTERISTICS DC Current Gain h FE (I = 5.0 mAdc, V = 10 Vdc) 50 C CE (I = 500 mAdc, V = 1.0 Vdc) 85 375 C CE (I = 1.0 Adc, V = 1.0 Vdc) 60 C CE CollectorEmitter Saturation Voltage (I = 1.0 Adc, I = 100 mAdc) V 0.5 Vdc C B CE(sat) BaseEmitter On Voltage (I = 1.0 Adc, V = 1.0 Vdc) V 1.0 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f 60 MHz T (I = 10 mAdc, V = 5.0 Vdc) C CE TYPICAL ELECTRICAL CHARACTERISTICS 400 300 V = 1 V CE 150C 200 300 25C 100 200 V = -10 V CE T = 25C 70 J 55C f = 30 MHz 100 50 0 30 -10 -100 -1000 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (mA) C I , COLLECTOR CURRENT (A) C Figure 1. DC Current Gain Figure 2. Current Gain Bandwidth Product

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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