BCW65ALT1G, BCW65CLT1G General Purpose Transistor NPN Silicon www.onsemi.com Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector Emitter Voltage V 32 Vdc CEO Collector Base Voltage V 60 Vdc 3 CBO Emitter Base Voltage V 5.0 Vdc EBO 1 Collector Current Continuous I 800 mAdc C 2 THERMAL CHARACTERISTICS SOT23 Characteristic Symbol Max Unit CASE 318 STYLE 6 Total Device Dissipation FR5 Board P 225 mW D (Note 1), T = 25C A Derate above 25C 1.8 mW/C MARKING DIAGRAMS Thermal Resistance, JunctiontoAmbient 556 C/W R JA Ex M Total Device Dissipation Alumina P D Substrate, (Note 2) T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance, Ex = Device Code JunctiontoAmbient R 417 C/W x = A or C JA M = Date Code* Junction and Storage Temperature T , T 55 to +150 C J stg = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the (Note: Microdot may be in either location) device. If any of these limits are exceeded, device functionality should not be *Date Code orientation and/or overbar may assumed, damage may occur and reliability may be affected. vary depending upon manufacturing location. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. ORDERING INFORMATION Device Package Shipping BCW65ALT1G SOT23 3000/Tape & Reel (PbFree) BCW65CLT1G SOT23 3000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: November, 2016 Rev. 6 BCW65ALT1/DBCW65ALT1G, BCW65CLT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 32 Vdc (BR)CEO (I = 10 mAdc, I = 0) C B CollectorEmitter Breakdown Voltage V 60 Vdc (BR)CES (I = 10 Adc, V = 0) C EB EmitterBase Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Cutoff Current I CES (V = 32 Vdc, I = 0) 20 nAdc CE E (V = 32 Vdc, I = 0, T = 150C) 20 Adc CE E A Emitter Cutoff Current I 20 nAdc EBO (V = 4.0 Vdc, I = 0) EB C ON CHARACTERISTICS DC Current Gain BCW65ALT1 h FE (I = 100 Adc, V = 10 Vdc) 35 C CE (I = 10 mAdc, V = 1.0 Vdc) 75 C CE (I = 100 mAdc, V = 1.0 Vdc) 100 250 C CE (I = 500 mAdc, V = 2.0 Vdc) 35 C CE DC Current Gain BCW65CLT1 h FE 80 (I = 100 Adc, V = 10 Vdc) C CE 180 (I = 10 mAdc, V = 1.0 Vdc) C CE 250 630 (I = 100 mAdc, V = 1.0 Vdc) C CE (I = 500 mAdc, V = 2.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.7 C B (I = 100 mAdc, I = 10 mAdc) 0.3 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 500 mAdc, I = 50 mAdc) 2.0 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 20 mAdc, V = 10 Vdc, f = 100 MHz) C CE Output Capacitance C 12 pF obo (V = 10 Vdc, I = 0, f = 1.0 MHz) CB E Input Capacitance C 80 pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) EB C Noise Figure NF 10 dB (V = 5.0 Vdc, I = 0.2 mAdc, R = 1.0 k , f = 1.0 kHz, BW = 200 Hz) CE C S SWITCHING CHARACTERISTICS TurnOn Time t 100 ns on (I = I = 15 mAdc) B1 B2 TurnOff Time t 400 ns off (I = 150 mAdc, R = 150 ) C L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2