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Emitter 2.Collector 3.Base Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage : BD676A - 45 V CBO : BD678A - 60 V : BD680A - 80 V : BD682 - 100 V V Collector-Emitter Voltage : BD676A - 45 V CEO : BD678A - 60 V : BD680A - 80 V : BD682 - 100 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 4 A C I *Collector Current (Pulse) - 6 A CP I Base Current - 100 mA B P Collector Dissipation (T =25C) 14 W C C R Thermal Resistance (Junction to Ambient) 88 C/W ja T Junction Temperature 150 C J T Storage Temperature - 65 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : BD676A I = - 50mA, I = 0 - 45 C B : BD678A - 60 : BD680A - 80 : BD682 - 100 I Collector-Base Voltage : BD676A V = - 45V, I = 0 - 200 A CBO CB E : BD678A V = - 60V, I = 0 - 200 A CB E : BD680A V = - 80V, I = 0 - 200 A CB E : BD682 V = - 100V, V = 0 - 200 A CB BE I Collector Cut-off Current : BD676A V = - 45V, V = 0 - 500 A CEO CE BE : BD678A V = - 60V, V = 0 - 500 A CE BE : BD680A V = - 80V, V = 0 - 500 A CE BE : BD682 V = - 100V, V = 0 - 500 A CE BE I Emitter Cut-off Current V = - 5V, I = 0 - 2 mA EBO EB C h * DC Current Gain : BD676A/678A/680A V = - 3V, I = - 2A 750 FE CE C : BD682 V = - 3V, I = - 1.5A 750 CE C V (sat) * Collector-Emitter Saturation Voltage CE : BD676A/678A/680A I = - 2A, I = - 40mA - 2.8 V C B : BD682 I = - 1.5A, I = - 30mA - 2.5 V C B V (on) * Base-Emitter On Voltage : BD676A/678A/680A V = - 3V, I = - 2A - 2.5 V BE CE C : BD682 V = - 3V, I = - 1.5A - 2.5 V CE C * Pulse Test: PW=300 s, duty Cycle=1.5% Pulse 2002 Fairchild Semiconductor Corporation Rev. B, September 2002