Thyristors Datasheet BTB12-600BW3G, BTB12-800BW3G Surface Mount 800V Pb Description The BTB12 is dAesigned for high performance full-wave AC control applications where high noise immunity and high commutating di/ dt are required. Features Blocking Voltage to 800 V Minimizes Snubber Networks for Protection On-State Current Rating of 12 Amperes RMS at 25C Industry Standard TO-220AB Package Uniform Gate Trigger Currents in Three Quadrants High Commutating dI/dt 4. A/ms minimum at 125C High Immunity to dV/dt 2000 V/s minimum at 125C These are PbFree Devices Additional Information Functional Diagram MT 2 MT 1 G Resources Accessories Samples Pin Out CASE 221A STYLE 4 1 2 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 02/15/21Thyristors Datasheet BTB12-600BW3G, BTB12-800BW3G Surface Mount 800V Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) BTB12600BW3G V , 600 DRM V (Gate Open, Sine Wave 50 to 60 Hz, T = -40 to 125C) BTB12800BW3G V 800 J RRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80C) I 12 A C T (RMS) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, T = 25C) I 120 A C TSM 2 Circuit Fusing Consideration (t = 10 ms) I t 78 Asec NonRepetitive Surge Peak OffState Voltage (T = 25C, t = 10 ms) V / V V / V +100 V J DSM RSM DSM RSM Peak Gate Current (T = 125C, t = 20ms) I 4.0 W J GM Peak Gate Power (Pulse Width 1.0 s, T = 80C) P 20 W C GM Average Gate Power (T = 125C) P 1.0 W J G(AV) Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages DRM RRM shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 2.3 JC Thermal Resistance C/W JunctiontoAmbient R 60 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L Electrical Characteristics - OFF (TJ = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit - - 0.005 Peak Repetitive Blocking Current T = 25C I , J DRM mA (V = V = V Gate Open) T = 125C I - - 1.0 D DRM RRM J RRM Electrical Characteristics - ON (TJ = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Forward On-State Voltage (Note 2) (I = 17 A Peak) V 1.55 V TM TM MT2(+), G(+) 2.5 50 Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 ) MT2(+), G() I 2.5 50 mA D L GT MT2(), G() 2.5 50 Holding Current (V = 12 V, Gate Open, Initiating Current = 100 mA) I 50 mA D H MT2(+), G(+) 70 Latching Current (V = 24 V, I = 60 mA) MT2(+), G() I 90 mA D G L MT2(), G() 70 MT2(+), G(+) 0.5 1.7 Gate Trigger Voltage (V = 12 V, R = 30 ) MT2(+), G() V 0.5 1.1 V D L GT MT2(), G() 0.5 1.1 MT2(+), G(+) 0.2 Gate NonTrigger Voltage (T = 125C) MT2(+), G() V 0.2 V J GD MT2(), G() 0.2 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 02/15/21