BTA16, BTB16 T1610, T1635 16 A Snubberless, logic level and standard Triacs A2 Features Medium current Triac G Low thermal resistance with clip bonding A1 A2 Low thermal resistance insulation ceramic for insulated BTA A1 A2 High commutation (4Q) or very high G commutation (3Q) capability 2 D PAK BTA series UL1557 certified (File ref: 81734) T1610G T1635G RoHS ( 2002/95/EC) compliant Insulated tab (BTA series, rated at 2500 V ) RMS A2 Applications Snubberless versions (BTA/BTB...W and A1 A1 A2 T1635) especially recommended for use on A2 G G inductive loads, because of their high TO-220AB TO-220AB commutation performances insulated BTB16 BTA16 On/off or phase angle function in applications such as static relays, light dimmers and appliance motor speed controllers Description Available either in through-hole or surface-mount packages, the BTA16, BTB16, T1610 and T1635 Triacs series are suitable for general purpose mains power AC switching. Table 1. Device summary (1) Symbol Parameter BTA16 BTB16 T1610 T1635 I On-state rms current 16 16 16 16 T(RMS) V /V Repetitive peak off-state voltage 600/800 600/800 600/800 600/800 DRM RRM I (Snubberless) Triggering gate current 35/50 35/50 - 35 GT I (logic level) Triggering gate current 10 10 10 - GT I (standard) Triggering gate current 25/50 25/50 - - GT 1. Insulated TM: Snubberless is a trademark of STMicroelectronics March 2010 Doc ID 7471 Rev 9 1/10 www.st.com 10Characteristics BTA16, BTB16, T1610, T1635 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value Unit 2 D PAK / T = 100 C c TO-220AB On-state rms current I 16 A T(RMS) (full sine wave) TO-220AB T = 86 C c insulated Non repetitive surge peak on-state F = 50 Hz t = 20 ms 160 I current A TSM F = 60 Hz t = 16.7 ms 168 (full cycle, T initial = 25 C) j ItI t value for fusing t = 10 ms 144 A s p Critical rate of rise of on-state current dI/dt F = 120 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r V / Non repetitive surge peak off-state V /V DSM DRM RRM t = 10 ms T = 25 C V p j V voltage + 100 RSM I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j -40 to + 150 T Storage temperature range stg -40 to + 125 T Maximum operating junction temperature j Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Snubberless and logic level (3 quadrants) BTA16 / BTB16 Symbol Test conditions Quadrant T1610 T1635 Unit SW CW BW (1) I I - II - III Max. 10 35 10 35 50 mA GT V = 12 V D R = 33 L V I - II - III Max. 1.3 V GT V = V D DRM V R = 3.3 k I - II - III Min. 0.2 V GD L T = 125 C j (2) I I = 500 mA Max. 15 35 15 35 50 mA H T I - III 25 50 25 50 70 I I = 1.2 I Max. mA L G GT II 30 60 30 60 80 V = 67 %V (2) D DRM dV/dt T = 125 C Min. 40 500 40 500 1000 V/s j gate open (dV/dt)c = 0.1 V/s T = 125 C 8.5 - 8.5 - - j (dI/dt)c (dV/dt)c = 10 V/s T = 125 C Min. 3.0 - 3.0 - - A/ms (2) j Without snubber T = 125 C - 8.5 - 8.5 14 j 1. Minimum IGT is guaranted at 5% of I max GT 2. For both polarities of A2 referenced to A1 2/10 Doc ID 7471 Rev 9