T435-600B STMicroelectronics

T435-600B electronic component of STMicroelectronics
T435-600B STMicroelectronics
T435-600B Triacs
T435-600B  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of T435-600B Triacs across the USA, India, Europe, Australia, and various other global locations. T435-600B Triacs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

Part No. T435-600B
Manufacturer: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; 35mA; SMD; Snubberless™; tube; DPAK
Datasheet: T435-600B Datasheet (PDF)
Price (USD)
3000: USD 0.2554 ea
Line Total: USD 766.2 
Availability : 5820
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
3000$ 0.2554
9000$ 0.2531
24000$ 0.2501

Availability 5820
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2554
9000$ 0.2531
24000$ 0.2501


Availability 798
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9844
10$ 0.7812
30$ 0.5214
100$ 0.3961
500$ 0.3642
1000$ 0.3436


Availability 6
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 0
QtyUnit Price
1$ 1.456
10$ 0.8806
48$ 0.4004
130$ 0.3794
5025$ 0.364


Availability 5820
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.2554
9000$ 0.2531
24000$ 0.2501


Availability 1673
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 609
Multiples : 1
QtyUnit Price
609$ 0.771
1000$ 0.711
10000$ 0.6339
100000$ 0.5312

   
Manufacturer
Product Category
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the T435-600B from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T435-600B and other electronic components in the Triacs category and beyond.

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T4 series 4 A Triacs Datasheet production data . Table 1. Main characteristics Symbol Value Unit I 4A T(rms) * V , V 600 to 800 V DRM RRM I 5 to 35 mA GT Table 2. Device summary * 2 % 7 (1) . ,3 Symbol Marking * T405-xxxB T405-xxxB-TR T405-xxxH * . 3 T405-xxxT T410-xxxB T410-xxxB-TR see Table 11 Features T410-xxxH Three quadrants Triac T410-xxxT 600 to 800 V V /V DRM RRM T435-xxxB T435-xxxB-TR Applications T435-xxxH General purpose AC inductive loads T435-xxxT Motor control circuits 1. xxx = Voltage: 600 V, 700 V or 800 V (see Table 10). Small home appliances Description Based on STs Snubberless / logic level technology providing high commutation performances, the T4 series is suitable for use on AC inductive loads. They are recommended for applications using universal motors, electro valves, kitchen aid equipments, power tools, and dishwashers. November 2016 DocID7699 Rev 9 1/15 This is information on a product in full production. www.st.com 15Characteristics T4 series 1 Characteristics Table 3. Absolute maximum ratings (T = 25 C unless otherwise stated) j Symbol Parameter Value Unit On-state rms current IPAK, DPAK, I T = 110 C 4 A T(rms) c TO-220AB (full sine wave) F = 50 Hz t = 20 ms 30 Non repetitive surge peak on-state I A TSM current (full cycle, T initial = 25 C) j F = 60 Hz t = 16.7 ms 31 ItI t value for fusing t = 10 ms 5.1 A s p Critical rate of rise of on-state dI/dt F = 120 Hz T = 125 C 50 A/s j current I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to +150 stg C T Operating junction temperature range - 40 to +125 j Table 4. Electrical characteristics (T = 25 C, unless otherwise stated) j Value Unit Symbol Test conditions Quadrant T405 T410 T435 (1) I V = 12 V, R = 30 I - II - III Max. 5 10 35 mA GT D L V V = 12 V, R = 30 I - II - III Max. 1.3 V D L GT V V = V , R = 3.3 k , T = 125 C I - II - III Min. 0.2 V GD D DRM L j (2) I I = 100 mA Max. 10 15 35 mA H T I - III Max. 102550 I I = 1.2 I mA L G GT II Max. 15 30 60 (2) dV/dt V = 67% V , gate open T = 125 C Min. 20 40 400 V/s D DRM j (dV/dt)c = 0.1 V/s 1.8 2.7 (2) (dI/dt)c (dV/dt)c = 10 V/s T = 125 C Min. 0.9 2.0 A/ms j (without snubber) 2.5 1. Minimum I is guaranteed at 5% of I max. GT GT 2. For both polarities of A2 referenced to A1 2/15 DocID7699 Rev 9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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