Product Information

BVSS123LT1G

BVSS123LT1G electronic component of ON Semiconductor

Datasheet
MOSFET NFET 100V 170MA 6OH

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0797 ea
Line Total: USD 239.1

189150 - Global Stock
Ships to you between
Tue. 28 May to Mon. 03 Jun
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
189150 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 3000
Multiples : 3000

Stock Image

BVSS123LT1G
ON Semiconductor

3000 : USD 0.0797

1552 - WHS 2


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 5
Multiples : 5

Stock Image

BVSS123LT1G
ON Semiconductor

5 : USD 0.2061
50 : USD 0.1669
150 : USD 0.1501
500 : USD 0.1291
3000 : USD 0.1076
6000 : USD 0.1019

3778 - WHS 3


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 5
Multiples : 5

Stock Image

BVSS123LT1G
ON Semiconductor

5 : USD 0.26
25 : USD 0.1378
100 : USD 0.1222
155 : USD 0.1053
425 : USD 0.1001

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Qualification
Configuration
Series
Transistor Type
Brand
Factory Pack Quantity :
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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The BVSS123LT1G with MOSFET NFET 100V 170MA 6OH is a third-generation MOSFET transistor manufactured by ON Semiconductor. This device offers excellent current and power handling capabilities for such a small package size (SOT-23 surface mount). With a voltage rating of 100V and a drain current of 170mA, it is suitable for use in high current switching applications. It features impressive on-state characteristics with high speed switching speeds, low switching noise and excellent thermal stability. The NFET (Complementary MOSFET) technology provides both N-channel enhancement and P-channel depletion devices in a single package for efficient power transfer and control.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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