CAT25640VE-GT3 ON Semiconductor

CAT25640VE-GT3 electronic component of ON Semiconductor
CAT25640VE-GT3 ON Semiconductor
CAT25640VE-GT3 EEPROM
CAT25640VE-GT3  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of CAT25640VE-GT3 EEPROM across the USA, India, Europe, Australia, and various other global locations. CAT25640VE-GT3 EEPROM are a product manufactured by ON Semiconductor. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

Part No.CAT25640VE-GT3
Manufacturer:ON Semiconductor
Category:EEPROM
Description:EEPROM Serial-SPI 64K-bit 8K x 8 2.5V/3.3V/5V 8-Pin SOIC N T/R
Datasheet:CAT25640VE-GT3 Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
482: USD 0.3471 ea
Line Total: USD 167.3 
Availability : 0
  
QtyUnit Price
482$ 0.3471
  

Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 482
Multiples : 482
QtyUnit Price
482$ 0.3471

   
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We are delighted to provide the CAT25640VE-GT3 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CAT25640VE-GT3 and other electronic components in the EEPROM category and beyond.

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CAT25640 64-Kb SPI Serial CMOS EEPROM Description The CAT25640 is a 64Kb Serial CMOS EEPROM device internally organized as 8Kx8 bits. This features a 64byte page write CAT25640 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = 1.8 V to 5.5 V, T = 40C to +85C and V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A CC A Symbol Parameter Test Conditions Min Max Units I Supply Current Read, V = 5.5 V, mA 10 MHz / 40C to 85C 2 CCR CC (Read Mode) SO open 5 MHz / 40C to 125C 2 I Supply Current Write, V = 5.5 V, 10 MHz / 40C to 85C 3 mA CCW CC (Write Mode) SO open 5 MHz / 40C to 125C 3 I Standby Current V = GND or V , CS = V , T = 40C to +85C 1 A SB1 IN CC CC A WP = V , V = 5.5 V CC CC T = 40C to +125C 2 A I Standby Current V = GND or V , CS = V , T = 40C to +85C 3 A SB2 IN CC CC A WP = GND, V = 5.5 V CC T = 40C to +125C 5 A I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage CS = V , T = 40C to +85C 1 1 A LO CC A Current V = GND or V OUT CC T = 40C to +125C 1 2 A V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage V 2.5 V, I = 3.0 mA 0.4 V OL1 CC OL V Output High Voltage V 2.5 V, I = 1.6 mA V 0.8 V V OH1 CC OH CC V Output Low Voltage V < 2.5 V, I = 150 A 0.2 V OL2 CC OL V Output High Voltage V < 2.5 V, I = 100 A V 0.2 V V OH2 CC OH CC

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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