Product Information

CAT93C46RVP2I-GT3

CAT93C46RVP2I-GT3 electronic component of ON Semiconductor

Datasheet
EEPROM Serial-Microwire 1K-bit 128 x 8/64 x 16 2.5V/3.3V/5V 8-Pin TDFN EP T/R

Manufacturer: ON Semiconductor
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Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000

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CAT93C46RVP2I-GT3
ON Semiconductor

3000 : USD 0.296
N/A

0 - WHS 2

MOQ : 3000
Multiples : 3000

Stock Image

CAT93C46RVP2I-GT3
ON Semiconductor

3000 : USD 0.303
N/A

0 - WHS 3

MOQ : 3000
Multiples : 3000

Stock Image

CAT93C46RVP2I-GT3
ON Semiconductor

3000 : USD 0.303
N/A

     
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CAT93C46R 1 kb Microwire Serial EEPROM Description The CAT93C46R is a 1 kb CMOS Serial EEPROM device which is organized as either 64 registers of 16 bits or 128 registers of 8 bits, as CAT93C46R Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Value Units Storage Temperature 65 to +150 C Voltage on Any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Block Mode, V = 5 V, T = 25C CC A Table 3. D.C. OPERATING CHARACTERISTICS (V = +1.8 V to +5.5 V, unless otherwise specified.) CC Symbol Parameter Test Conditions Min Max Units I Power Supply Current (Write) f = 1 MHz 1 mA CC1 SK V = 5.0 V CC I Power Supply Current (Read) f = 1 MHz 500 A CC2 SK V = 5.0 V CC I Power Supply Current (Standby) (x8 Mode) CS = 0 V 10 A SB1 ORG = GND I Power Supply Current (Standby) (x16 Mode) CS = 0 V 10 A SB2 ORG = Float or V CC I Input Leakage Current V = 0 V to V 2 A LI IN CC I Output Leakage Current (Including ORG pin) V = 0 V to V , 2 A LO OUT CC CS = 0 V V Input Low Voltage 4.5 V V < 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V < 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 1.8 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 1.8 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V < 5.5 V 0.4 V OL1 CC I = 2.1 mA OL V Output High Voltage 4.5 V V < 5.5 V 2.4 V OH1 CC I = 400 A OH V Output Low Voltage 1.8 V V < 4.5 V 0.2 V OL2 CC I = 1 mA OL V Output High Voltage 1.8 V V < 4.5 V V 0.2 V OH2 CC CC I = 100 A OH

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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