Product Information

CAT93C46VP2I-GT3

CAT93C46VP2I-GT3 electronic component of ON Semiconductor

Datasheet
ON Semiconductor EEPROM 1K-Bit Microwire

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1886
Multiples : 1886

Stock Image

CAT93C46VP2I-GT3
ON Semiconductor

1886 : USD 0.223
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

CAT93C46VP2I-GT3
ON Semiconductor

1 : USD 1.2877
10 : USD 0.5948
100 : USD 0.2994
1000 : USD 0.2474
3000 : USD 0.2245
9000 : USD 0.2233
24000 : USD 0.2182
45000 : USD 0.2131
99000 : USD 0.2068
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Access Time
Data Retention
Supply Current - Max
Series
Packaging
Brand
Operating Supply Current
Operating Supply Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Programming Voltage
Subcategory
LoadingGif

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CAT93C46 1 Kb Microwire Serial EEPROM Description The CAT93C46 is a 1 Kb Serial EEPROM memory device which is configured as either 64 registers of 16 bits (ORG pin at V ) or 128 CAT93C46 Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Value Units Storage Temperature 65 to +150 C Voltage on Any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Block Mode, V = 5 V, 25C CC Table 3. D.C. OPERATING CHARACTERISTICS (V = +1.8 V to +5.5 V, T = 40C to +85C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Power Supply Current (Write) f = 1 MHz 1 mA CC1 SK V = 5.0 V CC I Power Supply Current (Read) f = 1 MHz 500 A CC2 SK V = 5.0 V CC I Power Supply Current (Standby) (x8 Mode) V = GND or V , 2 A SB1 IN CC CS = GND ORG = GND I Power Supply Current (Standby) (x16Mode) V = GND or V , 1 A SB2 IN CC CS = GND ORG = Float or V CC I Input Leakage Current V = GND to V 1 A LI IN CC I Output Leakage Current V = GND to V , 1 A LO OUT CC CS = GND V Input Low Voltage 4.5 V V < 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V < 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 1.8 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 1.8 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V < 5.5 V 0.4 V OL1 CC I = 2.1 mA OL V Output High Voltage 4.5 V V < 5.5 V 2.4 V OH1 CC I = 400 A OH V Output Low Voltage 1.8 V V < 4.5 V 0.2 V OL2 CC I = 1 mA OL V Output High Voltage 1.8 V V < 4.5 V V 0.2 V OH2 CC CC I = 100 A OH

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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