CAT93C66 4 kb Microwire Serial CMOS EEPROM Description The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits (ORG pin at V ) or 512 CC www.onsemi.com registers of 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The device features sequential read and selftimed internal write with autoclear. Onchip PowerOn Reset circuitry protects the internal logic against powering up in the wrong state. SOIC8 Features V SUFFIX CASE 751BD High Speed Operation: 2 MHz 1.8 V to 5.5 V Supply Voltage Range Selectable x8 or x16 Memory Organization: CAT93C66 PIN CONFIGURATION (Top View) Sequential Read Software Write Protection 1 8 CS V CC Powerup Inadvertent Write Protection SK 2 7 NC Low Power CMOS Technology DI ORG 3 6 1,000,000 Program/Erase Cycles DO 4 5 GND 100 Year Data Retention SOIC (V) Industrial Temperature Ranges 8lead SOIC Package ORDERING INFORMATION This Device is PbFree, Halogen Free/BFR Free, and RoHS See detailed ordering and shipping information in the package Compliant dimensions section on page 9 of this data sheet. V CC ORG CS CAT93C66 DO SK DI GND Figure 1. Functional Symbols CAT93C66 Selectable Organization: When the ORG pin is connected to V , the x16 organization is CC selected. When it is connected to ground, the x8 organization is selected. If the ORG pin is left unconnected, then an internal pullup device will select the x16 organization. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: March, 2019 Rev. 14 CAT93C66/DCAT93C66 Table 1. PIN FUNCTION Pin Name Function Pin Name Function CS Chip Select V Power Supply CC SK Clock Input GND Ground DI Serial Data Input ORG Memory Organization DO Serial Data Output NC No Connection Table 2. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Storage Temperature 65 to +150 C Voltage on Any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 3. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Block Mode, V = 5 V, 25C. CC Table 4. D.C. OPERATING CHARACTERISTICS (V = +1.8 V to +5.5 V, T = 40C to +85C unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Power Supply Current f = 1 MHz, V = 5.0 V 1 mA CC1 SK CC (Write) I Power Supply Current f = 1 MHz, V = 5.0 V 500 A CC2 SK CC (Read) I Power Supply Current V = GND or V , T = 40C to +85C 2 A SB1 IN CC A (Standby) (x8 Mode) CS = GND ORG = GND I Power Supply Current V = GND or V , CS = GND T = 40C to +85C 1 A SB2 IN CC A (Standby) (x16 Mode) ORG = Float or V CC I Input Leakage Current V = GND to V T = 40C to +85C 1 A LI IN CC A I Output Leakage Current V = GND to V , T = 40C to +85C 1 A LO OUT CC A CS = GND V Input Low Voltage 4.5 V V < 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V < 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 1.8 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 1.8 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V < 5.5 V, I = 2.1 mA 0.4 V OL1 CC OL V Output High Voltage 4.5 V V < 5.5 V, I = 400 A 2.4 V OH1 CC OH V Output Low Voltage 1.8 V V < 4.5 V, I = 1 mA 0.2 V OL2 CC OL V Output High Voltage V 0.2 V 1.8 V V < 4.5 V, I = 100 A OH2 CC OH CC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2