Product Information

CAV25040VE-GT3

CAV25040VE-GT3 electronic component of ON Semiconductor

Datasheet
EEPROM 4KB SPI SER CMOS EEP

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

993: USD 0.4237 ea
Line Total: USD 420.73

0 - Global Stock
MOQ: 993  Multiples: 993
Pack Size: 993
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 993
Multiples : 993

Stock Image

CAV25040VE-GT3
ON Semiconductor

993 : USD 0.4237

0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

CAV25040VE-GT3
ON Semiconductor

1 : USD 1.5535
10 : USD 0.7689
25 : USD 0.575
50 : USD 0.5489
100 : USD 0.4909
250 : USD 0.4877
3000 : USD 0.4494

     
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CAV25010, CAV25020, CAV25040 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM Description The CAV25010/20/40 are 1 Kb/2 Kb/4 Kb Serial CMOS CAV25010, CAV25020, CAV25040 MARKING DIAGRAMS 25010E = CAV25010 S01E = CAV25010 25020E = CAV25020 S02E = CAV25020 25xx0E 25040E = CAV25040 S04E = CAV25040 SxxE AYMXXX A = Assembly Location A = Assembly Location AYMXXX Y = Production Year (Last Digit) Y = Production Year (Last Digit) M = Production Month (19, O, N, D) M = Production Month (19, O, N, D) XXX = Last Three Digits of XXX = Last Three Digits of (TSSOP8) XXX = Assembly Lot Number XXX = Assembly Lot Number (SOIC8) = PbFree Package = PbFree Package Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to V + 0.5 V CC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR Table 3. D.C. OPERATING CHARACTERISTICS (V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Read Mode) Read, V = 5.5 V, 10 MHz, SO open 2 mA CCR CC I Supply Current (Write Mode) Write, V = 5.5 V, 10 MHz, SO open 2 mA CCW CC I Standby Current V = GND or V , CS = V , 2 A SB1 IN CC CC WP = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , 5 A SB2 IN CC CC WP = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V , 1 2 A LO CC V = GND or V OUT CC V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL OL V Output High Voltage I = 1.6 mA V 0.8 V V OH OH CC Table 4. PIN CAPACITANCE (Note 2) (T = 25C, f = 1.0 MHz, V = +5.0 V) A CC Symbol Test Conditions Min Typ Max Units C Output Capacitance (SO) V = 0 V 8 pF OUT OUT C Input Capacitance (CS, SCK, SI, WP, HOLD) V = 0 V 8 pF IN IN 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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