CAV25080, CAV25160 8-Kb and 16-Kb SPI Serial CMOS EEPROM Description The CAV25080/25160 are 8 Kb/16Kb Serial CMOS EEPROM devices internally organized as 1024x8/2048x8 bits. They feature a CAV25080, CAV25160 MARKING DIAGRAMS 25xx0D AYMXXX SxxD AYMXXX (SOIC8) (TSSOP8) 25080D = CAV25080 S08D = CAV25080 25160D = CAV25160 S16D = CAV25160 A = Assembly Location A = Assembly Location Y = Production Year (Last Digit) Y = Production Year (Last Digit) M = Production Month (19, O, N, D) M = Production Month (19, O, N, D) XXX = Last Three Digits of XXX = Last Three Digits of XXX = Assembly Lot Number XXX = Assembly Lot Number = PbFree Package = PbFree Package Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Read Mode) Read, V = 5.5 V, 5 MHz, SO open 2 mA CCR CC I Supply Current (Write Mode) Write, V = 5.5 V, 5 MHz, SO open 3 mA CCW CC I Standby Current V = GND or V , CS = V , 2 A SB1 IN CC CC WP = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , 5 A SB2 IN CC CC WP = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V , 1 2 A LO CC V = GND or V OUT CC V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL1 OL V Output High Voltage I = 1.6 mA V 0.8 V V OH1 OH CC