Product Information

CAV25320VE-GT3

CAV25320VE-GT3 electronic component of ON Semiconductor

Datasheet
EEPROM 32KB SPI SER CMOS EE

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5865 ea
Line Total: USD 0.59

2779 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
649 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

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CAV25320VE-GT3
ON Semiconductor

1 : USD 0.5271
10 : USD 0.4859
100 : USD 0.4762
500 : USD 0.4762
1000 : USD 0.4762

2779 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

CAV25320VE-GT3
ON Semiconductor

1 : USD 0.5865
10 : USD 0.5405
100 : USD 0.4853
500 : USD 0.483
1000 : USD 0.4152
3000 : USD 0.3922
9000 : USD 0.391
24000 : USD 0.3818
45000 : USD 0.3611

649 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 16
Multiples : 1

Stock Image

CAV25320VE-GT3
ON Semiconductor

16 : USD 0.4859
100 : USD 0.4762

     
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CAV25320 EEPROM Serial 32-Kb SPI Automotive Grade 1 Description The CAV25320 is a EEPROM Serial 32Kb SPI Automotive Grade 1 device internally organized as 4096x8 bits. This features a www.onsemi.com 32byte page write buffer and supports the Serial Peripheral Interface (SPI) protocol. The device is enabled through a Chip Select (CS) input. In addition, the required bus signals are clock input (SCK), data input (SI) and data output (SO) lines. The HOLD input may be used to pause any serial communication with the CAV25320 device. The SOIC8 device features software and hardware write protection, including V SUFFIX partial as well as full array protection. CASE 751BD Features Automotive AECQ100 Grade 1 (40C to +125C) Qualified 10 MHz SPI Compatible TSSOP8 2.5 V to 5.5 V Supply Voltage Range Y SUFFIX SPI Modes (0,0) & (1,1) CASE 948AL 32byte Page Write Buffer Selftimed Write Cycle PIN CONFIGURATION Hardware and Software Protection CAV Prefix for Automotive and Other Applications Requiring Site 1 V CS CC and Change Control SO HOLD WP SCK Block Write Protection V SI SS Protect 1/4, 1/2 or Entire EEPROM Array SOIC (V), TSSOP (Y) Low Power CMOS Technology 1,000,000 Program/Erase Cycles PIN FUNCTION 100 Year Data Retention SOIC and TSSOP 8lead Packages Pin Name Function This Device is PbFree, Halogen Free/BFR Free, and RoHS CS Chip Select Compliant SO Serial Data Output WP Write Protect V CC V Ground SS SI Serial Data Input SI SCK Serial Clock CS CAV25320 SO HOLD Hold Transmission Input WP HOLD V Power Supply CC SCK ORDERING INFORMATION V SS See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. Figure 1. Functional Symbol Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: April, 2019 Rev. 3 CAV25320/DCAV25320 Table 1. ABSOLUTE MAXIMUM RATINGS Parameters Ratings Units Operating Temperature 45 to +130 C Storage Temperature 65 to +150 C Voltage on any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Page Mode, V = 5 V, 25C. CC Table 3. D.C. OPERATING CHARACTERISTICS (V = 2.5 V to 5.5 V, T = 40C to +125C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Read Mode) Read, V = 5.5 V, 10 MHz, SO open 2 mA CCR CC I Supply Current (Write Mode) Write, V = 5.5 V, CS = V 3 mA CCW CC CC I Standby Current V = GND or V , CS = V , 4 A SB1 IN CC CC WP = V , V = 5.5 V CC CC I Standby Current V = GND or V , CS = V , 6 A SB2 IN CC CC WP = GND, V = 5.5 V CC I Input Leakage Current V = GND or V 2 2 A L IN CC I Output Leakage Current CS = V , 1 2 A LO CC V = GND or V OUT CC V Input Low Voltage 0.5 0.3 V V IL CC V Input High Voltage 0.7 V V + 0.5 V IH CC CC V Output Low Voltage I = 3.0 mA 0.4 V OL1 OL V Output High Voltage I = 1.6 mA V 0.8 V V OH1 OH CC Table 4. PIN CAPACITANCE (Note 2) (T = 25C, f = 1.0 MHz, V = +5.0 V) A CC Symbol Test Conditions Min Typ Max Units C Output Capacitance (SO) V = 0 V 8 pF OUT OUT C Input Capacitance (CS, SCK, SI, WP, HOLD) V = 0 V 8 pF IN IN www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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