Product Information

CAV93C46VE-GT3

CAV93C46VE-GT3 electronic component of ON Semiconductor

Datasheet
EEPROM 1KB MICROWIRE SER EEPROM

Manufacturer: ON Semiconductor
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Price (USD)

1: USD 0.4002 ea
Line Total: USD 0.4

1143 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
416 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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CAV93C46VE-GT3
ON Semiconductor

1 : USD 0.3784
10 : USD 0.3531
100 : USD 0.3082
500 : USD 0.3082
1000 : USD 0.3001
3000 : USD 0.2771
9000 : USD 0.2691
24000 : USD 0.2679
45000 : USD 0.2611

     
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CAV93C46 EEPROM Serial 1-Kb Microwire - Automotive Grade 1 Description www.onsemi.com The CAV93C46 is an EEPROM Serial 1 Kb Microwire Automotive Grade 1 device, which is configured as either 64 registers of 16 bits (ORG pin at V ) or 128 registers of 8 bits (ORG pin at CC GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAV93C46 features a selftimed internal write with autoclear. Onchip PowerOn Reset circuit protects the internal TSSOP8 SOIC8 logic against powering up in the wrong state. Y SUFFIX V SUFFIX CASE 948AL CASE 751BD Features Automotive AECQ100 Grade 1 (40C to +125C) Qualified High Speed Operation: 2 MHz PIN CONFIGURATIONS 2.5 V to 5.5 V Supply Voltage Range CS V 1 CC SK NC Selectable x8 or x16 Memory Organization DI ORG SelfTimed Write Cycle with AutoClear DO GND Sequential Read SOIC (V), TSSOP (Y) Software Write Protection (Top View) Powerup Inadvertant Write Protection Low Power CMOS Technology PIN FUNCTION 1,000,000 Program/Erase Cycles 100 Year Data Retention Pin Name Function 8pin SOIC and TSSOP Packages CS Chip Select This Device is PbFree, Halogen Free/BFR Free and RoHS SK Clock Input Compliant DI Serial Data Input DO Serial Data Output V CC V Power Supply CC GND Ground ORG ORG Memory Organization CS DO CAV93C46 NC No Connection SK Note: When the ORG pin is connected to V , the CC DI x16 organization is selected. When it is connected to ground, the x8 organization is selected. If the ORG pin is left unconnected, then an internal pullup GND device will select the x16 organization. Figure 1. Functional Symbol ORDERING INFORMATION For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques See detailed ordering and shipping information in the package Reference Manual, SOLDERRM/D. dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: April, 2019 Rev. 2 CAV93C46/DCAV93C46 Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Value Units Storage Temperature 65 to +150 C Voltage on Any Pin with Respect to Ground (Note 1) 0.5 to +6.5 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The DC input voltage on any pin should not be lower than 0.5 V or higher than V + 0.5 V. During transitions, the voltage on any pin may CC undershoot to no less than 1.5 V or overshoot to no more than V + 1.5 V, for periods of less than 20 ns. CC Table 2. RELIABILITY CHARACTERISTICS (Note 2) Symbol Parameter Min Units N (Note 3) Endurance 1,000,000 Program / Erase Cycles END T Data Retention 100 Years DR 2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. 3. Block Mode, V = 5 V, 25C CC Table 3. D.C. OPERATING CHARACTERISTICS (V = +2.5 V to +5.5 V, T = 40C to +125C, unless otherwise specified.) CC A Symbol Parameter Test Conditions Min Max Units I Supply Current (Write) Write, V = 5.0 V 1 mA CC1 CC I Supply Current (Read) Read, DO open, f = 2 MHz, V = 5.0 V 500 A CC2 SK CC I Standby Current V = GND or V 5 A SB1 IN CC (x8 Mode) CS = GND, ORG = GND I Standby Current V = GND or V 3 A SB2 IN CC (x16 Mode) CS = GND, ORG = Float or V CC I Input Leakage Current V = GND to V 2 A LI IN CC I Output Leakage V = GND to V 2 A LO OUT CC Current CS = GND V Input Low Voltage 4.5 V V < 5.5 V 0.1 0.8 V IL1 CC V Input High Voltage 4.5 V V < 5.5 V 2 V + 1 V IH1 CC CC V Input Low Voltage 2.5 V V < 4.5 V 0 V x 0.2 V IL2 CC CC V Input High Voltage 2.5 V V < 4.5 V V x 0.7 V + 1 V IH2 CC CC CC V Output Low Voltage 4.5 V V < 5.5 V, I = 3 mA 0.4 V OL1 CC OL V Output High Voltage 2.4 V 4.5 V V < 5.5 V, I = 400 A OH1 CC OH V Output Low Voltage 2.5 V V < 4.5 V, I = 1 mA 0.2 V OL2 CC OL V Output High Voltage 2.5 V V < 4.5 V, I = 100 A V 0.2 V OH2 CC OH CC Table 4. PIN CAPACITANCE (T = 25C, f = 1 MHz, V = 5 V) A CC Symbol Test Conditions Min Typ Max Units C (Note 4) Output Capacitance (DO) V = 0 V 5 pF OUT OUT C (Note 4) Input Capacitance (CS, SK, DI, ORG) V = 0 V 5 pF IN IN 4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AECQ100 and JEDEC test methods. www.onsemi.com 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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