CM1248-04QG EDS Protection Diode Low Capacitance Features Low I/O Capacitance at 10 pF at 0 V www.onsemi.com InSystem ESD Protection to 15 kV Contact Discharge, per the IEC 6100042 International Standard Compact SMT Package Saves Board Space and Facilitates Layout in SpaceCritical Applications Each I/O Pin Can Withstand over 1000 ESD Strikes These Devices are PbFree and are RoHS Compliant UDFN6 QG SUFFIX CASE 517BM BLOCK DIAGRAM CM124804QG Pin 6 V Pin 4 N Pin 1 V Pin 3 N MARKING DIAGRAM LR LR = Specific Device Code ORDERING INFORMATION Device Package Shipping CM124804QG uDFN0.4 mm 3000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: August, 2017 Rev. 4 CM124804QG/DCM124804QG PACKAGE / PINOUT DIAGRAMS Top View Pin 1 Pin 6 Pin 2 Pin 5 Pin 3 Pin 4 6Lead uDFN (.4 mm) CM124804QG Table 1. PIN DESCRIPTIONS Pins Name Description (Refer to package / pinout diagrams) CHx The cathode of the respective surge protection diode, which should be connected to the node requiring transient voltage protection. (Refer to package / pinout diagrams) V The anode of the surge protection diodes. N SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Rating Units Storage Temperature Range 65 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 3. STANDARD OPERATING CONDITIONS Parameter Rating Units Operating Temperature 40 to +85 C Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Units C Channel Input Capacitance T = 25C, 0 VDC, 1 MHz Note 2 10 pF IN A 0 VDC, 1 MHz Note 1 7 15 pF C Differential Channel I/O to GND Capacitance T = 25C, 2.5 VDC, 1 MHz Note 2 0.19 pF IN A V Reverse Standoff Voltage I = 10 A, T = 25C 5.5 V RSO R A I = 1 mA, T = 25C 6.1 V R A I Leakage Current V = 5.0 VDC, T = 25C 0.25 A LEAK IN A V = 5.0 VDC, Note 1 0.75 A IN V Small Signal Clamp Voltage V SIG Positive Clamp I = 10 mA, T = 25C 6.8 A Negative Clamp I = 10 mA, T = 25C 0.89 A V ESD Withstand Voltage T = 25C kV ESD A Contact Discharge per IEC 6100042 standard (Notes 2, 4 and 5) 15 R Diode Dynamic Resistance T = 25C D A Forward Conduction (Notes 2 and 3) 0.57 Reverse Conduction 1.36 1. All parameters specified at T = 40C to +85C unless otherwise noted. A 2. These parameters guaranteed by design and characterization. 3. Human Body Model per MILSTD883, Method 3015, C = 100 pF, R = 1.5 K , V grounded. Discharge Discharge N 4. Standard IEC 6100042 with C = 150 pF, R = 330 , V grounded. Discharge Discharge N 5. These measurements performed with no external capacitor on Pin . X www.onsemi.com 2