Product Information

CM1771-5006YJQ

CM1771-5006YJQ electronic component of ON Semiconductor

Datasheet
1-CHANNEL ESD PROTECTOR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

30000: USD 0.0388 ea
Line Total: USD 1164

0 - Global Stock
MOQ: 30000  Multiples: 30000
Pack Size: 30000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 30000
Multiples : 30000

Stock Image

CM1771-5006YJQ
ON Semiconductor

30000 : USD 0.0388
30001 : USD 0.0352

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 30000
Multiples : 30000

Stock Image

CM1771-5006YJQ
ON Semiconductor

30000 : USD 0.0388
30001 : USD 0.0352

     
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CM1771 Advance Information 1-Channel ESD Protector Product Description The CM1771 provides robust ESD protection for sensitive parts that may be subjected to electrostatic discharge (ESD). The tiny form CM1771 SPECIFICATIONS Table 2. OPERATING CONDITIONS Parameter Rating Units Operating Temperature Range 40 to +150 C Storage Temperature Range 55 to +150 C Table 3. ELECTRICAL OPERATING CHARACTERISTICS Symbol Parameter Conditions Min Typ Max Units I Leakage Current V = +85 V, T = 25C 1.0 A LEAK A V Breakdown Voltage on Signal Node T = 25C V BD A Positive polarity on Signal Node at 1.0 mA (I ) +90 +100 +110 CL+ Negative polarity on Signal Node at 1.0 mA (I ) 80 60 CL V ESD Voltage Rating (Notes 1 and 2) kV ESD Contact Discharge per Human Body Model, 6 MILSTD883 (Method 3015) Contact Discharge per IEC6100042 Standard 3 1. Per the standard, 3 positive and 3 negative strikes are applied, one second apart. 2. V is the ESD capability for the protection device only. ESD MECHANICAL DETAILS Table 4. MECHANICAL SPECIFICATIONS (Note 1) SAWN DIE DIAGRAM Parameter Condition Unit Composition Silicon Wafer, P+ doped Die Shape Rectangular Length (Sawn) 48010 m Width (Sawn) 44010 m BG Thickness 6 mils Top Pad Length (a) 356 m Top Pad Width (b) 117 m Top Pads Spacing 103 m Top Pad Composition Au (Gold) Top Pad Thickness 3 m Back Metal (Underside) None (silicon Substrate) 1. Dimensions are typical values if tolerances are not specified. Package Dimensions

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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