Ordering number : ENN7122 CPH3318 P-Channel Silicon MOSFET CPH3318 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 4V drive. CPH3318 2.9 0.15 0.4 3 0.05 1 2 1.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V --30 V DSS Gate-to-Source Voltage V 20 V GSS Drain Current (DC) I --1 A D Drain Current (Pulse) I PW 10s, duty cycle 1% --4 A DP 2 Allowable Power Dissipation P Mounted on a ceramic board (900mm0.8mm) 0.9 W D Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =--1mA, V =0 --30 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =--30V, V =0 --1 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0 10 A GSS GS DS Cutoff Voltage V (off) V =--10V, I =--1mA --1.2 --2.6 V GS DS D Forward Transfer Admittance yfs V =--10V, I =--500mA 0.57 0.82 S DS D R (on)1 I =--500mA, V =--10V 420 550 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =--300mA, V =--4V 720 1000 m DS D GS Marking : JT Continued on next page. 2011, SCILLC. All rights reserved. Publication Order Number: www.onsemi.com Rev.0 I Page 1 of 4 I www.onsemi.com Jan-2011, Rev. 0 CPH3318/D 0.7 0.2 0.6 1.6 0.6 0.9 2.8 0.2CPH3318 Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max Input Capacitance Ciss V =--10V, f=1MHz 75 pF DS Output Capacitance Coss V =--10V, f=1MHz 16 pF DS Reverse Transfer Capacitance Crss V =--10V, f=1MHz 9 pF DS Turn-ON Delay Time t (on) See specified Test Circuit. 6 ns d Rise Time t See specified Test Circuit. 4 ns r Turn-OFF Delay Time t (off) See specified Test Circuit. 12 ns d Fall Time t See specified Test Circuit. 4 ns f Total Gate Charge Qg V =--10V, V =--10V, I =--1A 2.6 nC DS GS D Gate-to-Source Charge Qgs V =--10V, V =--10V, I =--1A 0.5 nC DS GS D Gate-to-Drain Miller Charge Qgd V =--10V, V =--10V, I =--1A 0.5 nC DS GS D Diode Forward Voltage V I =--1A, V =0 --0.89 --1.5 V SD S GS Switching Time Test Circuit V V = --15V DD IN 0V --10V I = --500mA D V IN R =30 L D V OUT PW=10s D.C. 1% G CPH3318 P.G 50 S I -- V I -- V D DS D GS --2.0 --1.4 V = --10V DS --1.2 --1.5 --1.0 --0.8 --1.0 --0.6 --0.4 --0.5 --0.2 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, V -- V IT03310 Gate-to-Source Voltage, V -- V IT03311 DS GS R (on) -- V R (on) -- Ta DS GS DS 1400 1200 Ta=25C 1200 1000 I = --0.3A --0.5A D 1000 800 800 600 600 400 400 200 200 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, V -- V IT03312 Ambient Temperature, Ta -- C IT03313 GS Rev.0 I Page 2 of 4 I www.onsemi.com V = --3V GS I = --0.5A, V = --10V D GS --4V I = --0.3A, V = --4V D GS --5V --6V --10V Ta=75C --25C 25C --8V Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D Static Drain-to-Source On-State Resistance, R (on) -- m Drain Current, I -- A DS D