CPH3351 Power MOSFET www.onsemi.com 60V, 250m , 1.8A, Single P-Channel V R (on) Max I DSS DS D Max Features 250m 10V Low On-Resistance 60V 330m 4.5V 1.8A 4V Drive 350m 4V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance Electrical Connection Specifications P-Channel Absolute Maximum Ratings at Ta = 25C 3 Parameter Symbol Value Unit Drain to Source Voltage V 60 V DSS Gate to Source Voltage V 20 V GSS Drain Current (DC) I 1.8 A D 1 1:Gate Drain Current (Pulse) A I 7.2 DP 2:Source PW 10s, duty cycle 1% 3:Drain Power Dissipation 2 When mounted on ceramic substrate P 1.0 W D 2 (900mm 0.8mm) C Junction Temperature Tj 150 Packing Type : TL Marking Storage Temperature Tstg 55 to +150 C Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient TL When mounted on ceramic substrate R 125 C/W JA 2 (900mm 0.8mm) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 2 CPH3351/D WH LOTNo.CPH3351 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =60V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transconductance g V =10V, I =1A 2.7 S FS DS D R(on)1 I =1A, V =10V 190 250m DS D GS Static Drain to Source On-State Resistance R(on)2 I =0.5A, V =4.5V 235 330m DS D GS R(on)3 I =0.5A, V =4V 250 350m DS D GS Input Capacitance Ciss 262 pF Output Capacitance Coss V =20V, f=1MHz 29 pF DS Reverse Transfer Capacitance Crss 19 pF Turn-ON Delay Time t (on) 5.1 ns d Rise Time t 5.4 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 34 ns d Fall Time t 19 ns f Total Gate Charge Qg 6.0 nC Gate to Source Charge Qgs V =30V, V =10V, I =1.8A 0.83 nC DS GS D Gate to Drain Miller Charge Qgd 1.3 nC Forward Diode Voltage V I =1.8A, V=0V 0.82 1.2 V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V = --30V IN DD 0V --10V I =--1A D V IN R =30 L D V OUT PW=10s D.C.1% G CPH3351 P.G 50 S www.onsemi.com 2