CPH5871 Power MOSFET www.onsemi.com 30V, 52m , 3.5A, Single N-Channel with Schottky Diode Features V R (on) Max I DSS DS D Max Composite Type with a N-channel Sillicon MOSFET and a 52m 4.5V MOSFET Schottky Barrier Diode Contained in One Package 30V 74m 2.5V 3.5A Facilitating High-density Mounting 132m 1.8V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance MOSFET High Speed Switching Electrical Connection MOSFET 1.8V Drive N-Channel SBD Short Reverse Recovery Time 54 3 SBD Low Forward Voltage 1:Cathode Specifications 2:Drain 3:Gate Absolute Maximum Ratings at Ta = 25C 4:Source Parameter Symbol Value Unit 5:Anode MOSFET 12 Drain to Source Voltage V 30V DSS V Gate to Source Voltage V 12 GSS A Drain Current (DC) I 3.5 D Packing Type : TL Marking Drain Current (Pulse) I 14 A DP PW10s, duty cycle1% Power Dissipation When mounted on ceramic substrate P 0.9W D 2 (600mm 0.8mm) 1unit TL Junction Temperature Tj 150 C C Storage Temperature Tstg 55 to +125 SBD Repetitive Peak Reverse Voltage V 30 V RRM Nonrepetitive Peak Reverse Surge Voltage V 35 V RSM Average Output Current I 1 A O Surge Forward Current I 10 A FSM 50Hz sine wave, 1cycle Junction Temperature Tj 55 to +125 C Storage Temperature Tstg 55 to +125 C Thermal Resistance Ratings Parameter Symbol Value Unit Junction to Ambient When mounted on ceramic substrate R 138.8 C/W JA 2 (600mm 0.8mm) 1unit Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : March 2015 - Rev. 2 CPH5871/D YZ LOTNo.CPH5871 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max MOSFET Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =8V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 0.4 1.3V GS DS D Forward Transconductance g V =10V, I=2A 2.0 3.4 S FS DS D R(on)1 I =2A, V=4.5V 40 52m DS D GS Static Drain to Source On-State Resistance R(on)2 I =1A, V=2.5V 53 74m DS D GS R(on)3 I =0.5A, V=1.8V 82 132m DS D GS Input Capacitance Ciss 430 pF Output Capacitance Coss V =10V, f=1MHz 59 pF DS Reverse Transfer Capacitance Crss 38 pF Turn-ON Delay Time t (on) 10 ns d Rise Time t 41 ns r See specified Test Circuit Turn-OFF Delay Time t (off) 36 ns d Fall Time t 37 ns f Total Gate Charge Qg 4.7 nC Gate to Source Charge Qgs V =15V, V =4.5V, I =3.5A 0.8 nC DS GS D Gate to Drain Miller Charge Qgd 1.1 nC Forward Diode Voltage V I =3.5A, V=0V 0.8 1.2V SD S GS SBD Reverse Voltage V I=0.5mA 30 V R R V I=0.7A 0.45 0.5V F1 F Forward Voltage V I=1A 0.48 0.53V F2 F Reverse Current I V=16V 15 A R R Interterminal Capacitance C V =10V, f=1MHz, 1cycle 27 pF R Reverse Recovery Time t I = I =100mA, See specified Test Circuit 10 ns rr F R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit trr Test Circuit (MOSFET) (SBD) V V =15V DD IN 4.5V Duty10% 0V I =2A D V IN R =7.5 L 50 100 10 D V OUT PW=10s D.C.1% 10s G --5V t rr CPH5871 P.G 50 S www.onsemi.com 2 100mA 100mA 10mA