Product Information

DCC010-TB-E

DCC010-TB-E electronic component of ON Semiconductor

Datasheet
ON Semiconductor Diodes - General Purpose, Power, Switching SWITCHING DIODE

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

DCC010-TB-E
ON Semiconductor

1 : USD 0.3902
10 : USD 0.2911
100 : USD 0.158
1000 : USD 0.1192
3000 : USD 0.1019
9000 : USD 0.0985
24000 : USD 0.0985
45000 : USD 0.0974
99000 : USD 0.093
N/A

Obsolete
0 - WHS 2

MOQ : 343
Multiples : 1

Stock Image

DCC010-TB-E
ON Semiconductor

343 : USD 0.1839
500 : USD 0.1818
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Ordering number :EN1896B DCC010 Sillicon Epitaxial Planar Type (Series Connection) Ultrahigh-Speed Switching Diode Features Package Dimensions Ideally suited for use in hybrid ICs because of very unit:mm small package. 1147A Fast switching speed. DCC010 Small interterminal capacitance. 1:Anode 2:Cathode 3:Cathode, Anode Specifications SANYO:CP Absolute Maximum Ratings at Ta = 25C Plarameter Ssymbo Csondition Rtating Uni PVeak Reverse Voltage 8V5 RM RVeverse Voltage 8V0 R PIeak Forward Current Unit Rating 3A00 m FM 2A10 m AIverage Rectified Current Unit Rating 1A00 m O 7A0 m SIurge Current (1s) Unit Rating 4A FSM 2A.8 PPower Dissipation 2W00 m Jjunction Temperature T 125 C Sgtorage Temperature Tst 55 to +125 C Electrical Characteristics at Ta = 25C Ratings Plarameter Ssymbo Condition Unit mpintxy ma Forward Voltage V(I1)=01mA 0V.6 F F V(I2)=210mA 0V.7 F F V(I3) =100mA 1V.20 F F Reverse Current I(V1) =30V 0A.1 R R I(V2) =80V 0A.5 R R ICnterterminal Capacitance V =0V, f=1MHz 3F.0 p R Rreverse Recovery Time tIr =10mA, V =6V, R =50,0Irr=0.1Irp 4s. n F R L Marking:W7 Electrical Connection Reverse Recovery Time Test Circuit (Top view) SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 33098HA (KT)/32996GI (KOTO)/D2028TA/N148TA, TS No.1896-1/2DCC010 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 1998. Specifications and information herein are subject to change without notice. PS No.1896-2/2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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