ECH8659 Power MOSFET 30V, 24m , 7A, Dual N-Channel This Power MOSFET is produced using ON Semiconductors trench technology, which is specifically designed to minimize gate charge and low www.onsemi.com on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features V R (on) Max I DSS DS D Max 4V drive 24m 10V Composite type, Facilitating high-density mounting 30V 41m 4.5V 7A ESD Diode-Protected Gate 55m 4V Pb-Free, Halogen Free and RoHS compliance Typical Applications ELECTRICAL CONNECTION LiB Protection Switch N-Channel Motor Drive 87 65 SPECIFICATIONS 1:Source1 2:Gate1 ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 3:Source2 Parameter SymbolValue Unit 4:Gate2 5:Drain2 Drain to Source Voltage V 30V DSS 6:Drain2 Gate to Source Voltage V 20 V GSS 7:Drain1 8:Drain1 Drain Current (DC) I 7A D Drain Current (Pulse) 1234 I 40 DP A PW 10s, duty cycle 1% Power Dissipation PACKING TYPE : TL MARKING When mounted on ceramic substrate P 1.3 D W 2 (900mm 0.8mm) 1unit Total Dissipation TE When mounted on ceramic substrate P 1.5W T 2 (900mm 0.8mm) LotNo. Junction Temperature Tj 150 C TL Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping THERMAL RESISTANCE RATINGS information on page 5 of this data sheet. Parameter SymbolValue Unit Junction to Ambient R 96.1 C/W When mounted on ceramic substrate JA 2 (900mm 0.8mm) 1unit Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : May 2015 - Rev. 2 ECH8659/D ECH8659 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 30 V BR DSS D GS Zero-Gate Voltage Drain Current I V =30V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=3.5A 2.2 3.7 S FS DS D R (on)1 I =3.5A, V=10V 18 24m DS D GS Static Drain to Source On-State R (on)2 I =2A, V =4.5V 29 41 m DS D GS Resistance 39 55 R (on)3 I =2A, V =4V m DS D GS Input Capacitance Ciss 710 pF Output Capacitance Coss V =10V, f=1MHz 120 pF DS Reverse Transfer Capacitance Crss 72 pF Turn-ON Delay Time t (on) 10 ns d Rise Time 25 ns t r See specified Test Circuit Turn-OFF Delay Time t (off) 43 ns d Fall Time 25 ns t f Total Gate Charge Qg 11.8 nC Gate to Source Charge Qgs 2.4 nC V =15V, V =10V, I =3.5A DS GS D Gate to Drain Miller Charge Qgd 2.0 nC V Forward Diode Voltage I =7A, V=0V 0.79 1.2V SD S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =15V IN DD 10V 0V I =3.5A D V IN R =4.3 L D V OUT PW=10s D.C.1% G ECH8659 P.G 50 S www.onsemi.com 2