EFC4618R-P Power MOSFET www.onsemi.com 24V, 6A, 23m, Dual N-Channel Features 2.5V Drive Best Suited for LiB Charging and Discharging Switch Common-drain Type ESD Diode - Protected Gate Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Source-to-Source Voltage V 24 V SSS Gate-to-Source Voltage V 12 V GSS Source Current (DC) I 6 A S Source Current (Pulse) I PW10s, duty cycle1% 60 A SP 2 Total Dissipation P When mounted on ceramic substrate (5000mm 0.8mm) 1.6 W T Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) Package : EFCP 7069-001 JEITA, JEDEC : - Minimum Packing Quantity : 5,000 pcs./reel 1.81 EFC4618R-P-TR 4 3 Packing Type : TR Marking TR FT 1 2 LOT No. Electrical Connection 1 0.65 Rg 1 : Source1 12 2 2 : Gate1 43 3 : Gate2 4 : Source2 Rg 0.3 EFCP1818-4CC-037 3 Rg=200 4 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 Publication Order Number : 1 October 2014 - Rev. 2 EFC4618R-P/D 0.65 1.81 0.15 0.22 0.37EFC4618R-P Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Source-to-Source Breakdown Voltage V I =1mA, V =0V Test Circuit 1 24 V (BR)SSS S GS Zero-Gate Voltage Source Current I V =20V, V =0V Test Circuit 1 1 A SSS SS GS Gate-to-Source Leakage Current I V =8V, V =0V Test Circuit 2 10 A GSS GS SS Cutoff Voltage V (off) V =10V, I =1mA Test Circuit 3 0.5 1.3 V GS SS S Forward Transfer Admittance yfs V =10V, I =3A Test Circuit 4 6.5 S SS S R (on)1 I =3A, V =4.5V Test Circuit 5 13.5 19.8 23 m SS S GS R (on)2 I =3A, V =4.0V Test Circuit 5 14 20.5 24 m SS S GS Static Source-to-Source On-State Resistance R (on)3 I =3A, V =3.7V Test Circuit 5 14.5 21 25.5 m SS S GS R (on)4 I =3A, V =3.1V Test Circuit 5 14.9 23 30 m SS S GS R (on)5 I =3A, V =2.5V Test Circuit 5 18.5 27 35 m SS S GS Turn-ON Delay Time t (on) 200 ns d Rise Time t 815 ns r See specified Test Circuit. Test Circuit 7 Turn-OFF Delay Time t (off) 1840 ns d Fall Time t 1770 ns f Total Gate Charge Qg V =10V, V =4.5V, I =6A 25.4 nC SS GS S Forward Source-to-Source Voltage V I =3A, V =0V Test Circuit 6 0.76 1.2 V F(S-S) S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Package Shipping memo EFC4618R-P-TR EFCP 5,000pcs./reel Pb-Free and Halogen Free Test circuits are example of measuring FET1 side Test Circuit 1 Test Circuit 2 V / I I (+) / (--) SSS SSS GSS S2 S2 G2 G2 G1 G1 S1 S1 IT11565 IT11566 Test Circuit 3 Test Circuit 4 V (off) yfs GS S2 S2 G2 G2 10V 1mA G1 G1 S1 S1 IT11567 IT11568 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. www.onsemi.com 2