Ordering number : ENA2288 EFC4627R N-Channel Power MOSFET EFC4627R Test circuits are example of measuring FET1 side Test Circuit 2 Test Circuit 1 I I GSS SSS S2 S2 G2 G2 A G1 V G1 SS A V S1 GS S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. Test Circuit 3 Test Circuit 4 g V (th) FS GS S2 S2 G2 G2 A A When FET1 is measured, Gate and Source of FET2 are short-circuited. V G1 V G1 SS SS V V GS GS S1 When FET1 is measured, S1 Gate and Source of FET2 are short-circuited. Test Circuit 6 Test Circuit 5 t (on), t ,t (off), t d r d f R (on) SS S2 S2 RL IS G2 G2 V V G1 G1 V SS V GS S1 When FET1 is measured, S1 PG Gate andSourceofFET2 are short-circuited. Test Circuit 8 Test Circuit 7 V F(S-S) Qg S2 S2 I A S G2 G2 When FET1 is measured, Gate and Source of FET2 are short-circuited. V I =1mA G G1 G1 VGS=0V RL S1 When FET1 is S1 measured,+4.5V is added to V SS PG VGS of FET2. When FET2 is measured, the position of FET1 and FET2 is switched. No.A2288-2/6