EFC6604R Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 9.0m, 13A, Dual N-Channel www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. V R (on) Max I SSS SS S Max 9.0m 4.5V Features 9.7m 4.0V 2.5V drive 12V 13A 10.0m 3.8V 2kV ESD HBM 12.7m 3.1V Common-Drain Type 17.7m 2.5V ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance ELECTRICAL CONNECTION Applications N-Channel 1-Cell Lithium-ion Battery Charging and Discharging Switch 4, 6 SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Rg Parameter Symbol Value Unit 5 Source to Source Voltage V 12 V SSS Gate to Source Voltage V 12 V GSS Source Current (DC) I 13 A S Rg 1 : Source1 Source Current (Pulse) 2 I 60 A 2 : Gate1 SP PW 10 s, duty cycle 1% 3 : Source1 Total Dissipation 4 : Source2 Surface mounted on ceramic substrate P T 1.6 W 2 5 : Gate2 (5000mm 0.8mm) Rg=200 1, 3 6 : Source2 Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MARKING assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS MD Parameter Symbol Value Unit LOT No. Junction to Ambient Surface mounted on ceramic substrate C/W R 78.1 JA 2 (5000mm 0.8mm) ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number : March 2016 - Rev. 2 EFC6604R/D EFC6604R ELECTRICAL CHARACTERISTICS at Ta 25C (Note 2) Ratings Parameter Symbol Conditions Unit min typ max Source to Source Breakdown V(BR) I =1mA, V =0V Test Circuit 1 12 V SSS S GS Voltage Zero-Gate Voltage Source Current I V =10V, V =0V Test Circuit 1 1 A SSS SS GS Gate to Source Leakage Current I V =8V, V =0V Test Circuit 2 1.0 A GSS GS SS Gate Threshold Voltage V (th) V =6V, I =1mA Test Circuit 3 0.5 1.3 V GS SS S Forward Transconductance g V =6V, I =3A Test Circuit 4 13.7 S FS SS S R (on)1 I =3A, V =4.5V Test Circuit 5 6.0 7.5 9.0 m SS S GS R (on)2 I =3A, V =4.0V Test Circuit 5 6.4 8.1 9.7 m SS S GS Static Source to Source On-State R (on)3 I =3A, V =3.8V Test Circuit 5 6.7 8.4 10.0 m SS S GS Resistance R (on)4 I =3A, V =3.1V Test Circuit 5 7.8 9.8 12.7 m SS S GS R (on)5 I =3A, V =2.5V Test Circuit 5 10.0 12.6 17.7 m SS S GS Turn-ON Delay Time t (on) 300 ns d Rise Time t 1200 ns r V =6V, V =4.5V, I=3A SS GS S Turn-OFF Delay Time Test Circuit 6 t (off) 5200 ns d Fall Time t 3900 ns f Total Gate Charge V =6V, V =4.5V, I =13A SS GS S Qg 29 nC Test Circuit 7 Forward Source to Source Voltage V I =3A, V =0V Test Circuit 8 0.75 1.2 V F(S-S) S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2