EFC4C012NL Power MOSFET for 3-Cells Lithium-ion Battery Protection 30 V, 6.5 m , 19 A, Dual N-Channel, www.onsemi.com WLCSP6 V R Max I Max This N Channel Power MOSFET is produced using SSS SS(on) S ON Semiconductors trench technology, which is specifically 6.5 m 10 V designed to minimize gate charge and ultra low on resistance. 30 V 8.4 m 8 V 19 A This device is suitable for applications of Notebook PC. 13 m 4.5 V Features ELECTRICAL CONNECTION Ultra Low OnResistance NCHANNEL Low Gate Charge 5 6 CommonDrain type These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Applications 3,4 3Cells Lithiumion Battery Charging and Discharging Switch 1. Gate 1 SPECIFICATIONS 2. Source 1 3. Drain 4. Drain ABSOLUTE MAXIMUM RATINGS at T = 25 C(Note 1) A 5. Source 2 6. Gate 2 2 Parameter Symbol Value Unit 1 Source to Source Voltage V 30 V SSS PIN ASSIGNMENT Gate to Source Voltage V 20 V GSS Source Current (DC) I 19 A S Source Current (Pulse) I 76 A SP PW 10 s, duty cycle 1% (Bottom View) Total Dissipation (Note 2) P 2.5 W T Junction Temperature Tj 150 C MARKING Storage Temperature Tstg 55 to +150 C DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NP AYWZZ WLCSP6 THERMAL RESISTANCE RATINGS CASE 567SZ Parameter Symbol Value Unit Junction to Ambient (Note 1) R 50 C/W JA A = Assembly Location 2 Y = Year 1. Surface mounted on ceramic substrate(5000 mm 0.8 mm). W = Work Week ZZ = Assembly Lot = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: November, 2017 Rev. 0 EFC4C012NL/DEFC4C012NL ELECTRICAL CHARACTERISTICS at T = 25 C (Note 1) A Value Min Typ Max Parameter Symbol Conditions Unit Source to Source Breakdown Voltage V( ) I = 1 mA, V = 0 V 30 V BR SSS S GS ZeroGate Voltage Source Current I V = 24 V, V = 0 V 1 A SSS SS GS Gate to Source Leakage Current I V = 20 V, V = 0 V 200 nA GSS GS SS Gate Threshold Voltage V (th) V = 10 V, I = 1 mA 1.3 2.2 V GS SS S Static Source to Source OnState Re- R (on) V = 10 V, I = 5 A 3.7 5.0 6.5 m SS GS S sistance V = 8 V, I = 5 A 4.0 5.3 8.4 m GS S V = 4.5 V, I = 5 A 5.5 7.3 13 m GS S TurnON Delay Time t (on) V = 15 V, V = 10 V 2.7 s d SS GS I = 5 A, Rg = 5 k S Rise Time t 2.0 s r Switching Test Circuit TurnOFF Delay Time t (off) 26 s d Fall Time t 5.7 s f Total Gate Charge Qg V = 15 V, V = 4.5 V 18 nC SS GS I = 5 A S Forward Source to Source Voltage V I = 5 A, V = 0 V, Power Time = 1ms 0.75 1.2 V F(S S) S GS 2. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Figure 1. Switching Test Circuit www.onsemi.com 2