Ordering number : ENA1170A EMH2408 N-Channel Power MOSFET EMH2408 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 20 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =20V, V =0V 1 A DSS DS GS Gate-to-Source Leakage Current I V =8V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 0.4 1.3 V GS DS D Forward Transfer Admittance yfs V =10V, I =2A 2.0 3.4 S DS D R (on)1 I =4A, V =4.5V 34 45 m DS D GS Static Drain-to-Source On-State Resistance R (on)2 I =1A, V =2.5V 49 67 m DS D GS R (on)3 I =0.5A, V =1.8V 74 115 m DS D GS Input Capacitance Ciss 345 pF Output Capacitance Coss V =10V, f=1MHz 67 pF DS Reverse Transfer Capacitance Crss 52 pF Turn-ON Delay Time t (on) 9.2 ns d Rise Time t 60 ns r See speci ed Test Circuit. Turn-OFF Delay Time t (off) 30 ns d Fall Time t 38 ns f Total Gate Charge Qg 4.7 nC Gate-to-Source Charge Qgs V =10V, V =4.5V, I =4A 0.65 nC DS GS D Gate-to-Drain Miller Charge Qgd 1.6 nC Diode Forward Voltage V I =4A, V =0V 0.8 1.2 V SD S GS Switching Time Test Circuit V V =10V DD IN 4.5V 0V I =2A D V IN R =5 L D V OUT PW=10 s D.C.1% G EMH2408 P.G 50 S Ordering Information Device Package Shipping memo EMH2408-TL-H EMH8 3,000pcs./reel Pb Free and Halogen Free No. A1170-2/7