EMH2417R-TL-H ON Semiconductor
MOSFET NCH+NCH 8.5A 24V 2.5V DRI Stock : 0
ON Semiconductor ESD Suppressors 2PAIR CMF Stock : 0
ESD Suppressors / TVS Diodes COMMON MODE FILTER W ESD Stock : 0
ON Semiconductor ESD Suppressors 4PAIR CMF WITH ESD Stock : 0
ON Semiconductor ESD Suppressors 3PAIR LOW RES CMF Stock : 3000
ESD Suppressors / TVS Diodes 1PAIR CMF + VBUS Stock : 0
ESD Suppressors / TVS Diodes 4CH RC EMI FILTER Stock : 0
ESD Suppressors / TVS Diodes LOW RESISTANCE CMF W ESD Stock : 45
EMI Filter Circuits 1PAIR CMF FOR MHL Stock : 77
EMI Filter Beads, Chips & Arrays CMF WITH ESD Stock : 2827
MOSFET NCH 4V DRIVE SERIES Stock : 0
MOSFET PCH 4V DRIVE SERIES Stock : 0
Trans MOSFET N-CH Si 50V 0.1A 3-Pin SPA Bag Stock : 0
Trans MOSFET P-CH 50V 0.07A 3-Pin SPA Bag Stock : 0
ON Semiconductor MOSFET NFET SPCL TR Stock : 0
IRF9Z34 HEXFET T/HOLE Stock : 0
MOSFET PCH 1.8V DRIVE SERIE Stock : 3218
ON Semiconductor MOSFET PCH 1.2V DRIVE SERIES Stock : 0
MOSFET NCH 1.8V DRIVE SERIE Stock : 4139
MOSFET SWITCHING DEVICE Stock : 0
Ordering number : ENA2313A EMH2417R N-Channel Power MOSFET EMH2417R Continued from preceding page Value Parameter Symbol Conditions Unit min typ max Turn-ON Delay Time t (on) 470 ns d Rise Time t 1600 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 8900 ns d Fall Time t 6400 ns f Total Gate Charge Qg 16 nC Gate to Source Charge Qgs V =6V, V =4.5V, I =11A 3 nC DS GS D Gate to Drain Miller Charge Qgd 5 nC Forward Diode Voltage V I =11A, V=0V 0.8 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Ordering & Package Information Packing Type:TL Marking Device Package Shipping note Pb-Free 3,000 LS EMH2417R-TL-H EMH8 and pcs. / reel Halogen Free TL LOT No. Electrical Connection Switching Time Test Circuit 8 76 5 123 4 No.A2313-2/5
