X-On Electronics has gained recognition as a prominent supplier of EMH2418R-TL-H MOSFETs across the USA, India, Europe, Australia, and various other global locations. EMH2418R-TL-H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
We are delighted to provide the EMH2418R-TL-H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMH2418R-TL-H and other electronic components in the MOSFETs category and beyond.
Ordering number : ENA2267A EMH2418R N-Channel Power MOSFET EMH2418R Electrical Characteristics at Ta 25 C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 24 V BR DSS D GS I V =20V, V=0V 1 A Zero-Gate Voltage Drain Current DSS DS GS I V =8V, V=0V 1 A Gate to Source Leakage Current GSS GS DS V(th) V =10V, I=1mA 0.5 1.3V Gate Threshold Voltage GS DS D g V =10V, I=4A 4 S Forward Transconductance FS DS D R (on)1 I =4A, V=4.5V 9.6 12 15m DS D GS R (on)2 I =4A, V=4.0V 10.0 12.5 16.3m DS D GS Static Drain to Source On-State Resistance R (on)3 I =4A, V=3.1V 11.3 14.2 20m DS D GS R (on)4 I =2A, V=2.5V 13.2 16.5 23.1m DS D GS Turn-ON Delay Time t (on) See specified Test Circuit. 120 ns d Rise Time t 170 ns r Turn-OFF Delay Time t(off) 17500 ns d Fall Time t 22600 ns f Total Gate Charge Qg V =10V, V =4.5V, I=9A 4.4 nC DS GS D Gate to Source Charge Qgs 0.9 nC Gate to Drain Miller Charge Qgd 0.7 nC Forward Diode Voltage V I =9A, V=0V 0.8 1.2V SD S GS Switching Time Test Circuit V =10V V DD IN 4.5V 0V I =4A D V IN R =2.5 L D V OUT PW=10 s D.C.1% Rg G EMH2418R P.G 50 S Rg=1k No.A2267-2/6
