EMT1DXV6T1G ON Semiconductor

EMT1DXV6 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier EMT1DXV6 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Typ Max Unit CollectorBase Breakdown Voltage V 60 Vdc (BR)CBO (I = 50 Adc, I = 0) C E CollectorEmitter Breakdown Voltage V 50 Vdc (BR)CEO (I = 1.0 mAdc, I = 0) C B EmitterBase Breakdown Voltage V 6.0 Vdc (BR)EBO (I = 50 Adc, I = 0) E E CollectorBase Cutoff Current I 0.5 nA CBO (V = 30 Vdc, I = 0) CB E EmitterBase Cutoff Current I 0.5 A EBO (V = 5.0 Vdc, I = 0) EB B CollectorEmitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.5 C B DC Current Gain (Note 2) h FE (V = 6.0 Vdc, I = 1.0 mAdc) 120 560 CE C Transition Frequency f MHz T (V = 12 Vdc, I = 2.0 mAdc, f = 30 MHz) 140 CE C Output Capacitance C 3.5 pF OB (V = 12 Vdc, I = 0 Adc, f = 1 MHz) CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, D.C. 2%. ORDERING INFORMATION Device Package Shipping EMT1DXV6T1G SOT563 4000 / Tape & Reel (PbFree) NSVEMT1DXV6T1G* SOT563 4000 / Tape & Reel (PbFree) EMT1DXV6T5G SOT563 8000 / Tape & Reel (PbFree) NSVEMT1DXV6T5G* SOT563 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable.