ESD5102 ESD Protection Diodes Micropackaged Diodes for ESD Protection The ESD5102 is designed to protect voltage sensitive components www.onsemi.com from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in MARKING smartphone, smart-watch, or many other portable / wearable DIAGRAM applications where board space comes at a premium. DSN3 T Features CASE 152AW M Bidirectional Dual Line ESD Protection Low Capacitance (5 pF Max, I/O to GND) T = Specific Device Code Small Body Outline Dimensions: 0.705 x 0.23 mm M = Month Code Protection for the Following IEC Standards: IEC 6100042 (Level 4) Low ESD Clamping Voltage PIN CONFIGURATION AND SCHEMATIC These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 12 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +125 C J ORDERING INFORMATION Storage Temperature Range T 55 to +150 C stg Device Package Shipping Lead Solder Temperature T 260 C L Maximum (10 Seconds) ESD5102FCT5G DSN3 10,000 / IEC 6100042 Contact (ESD) ESD 15 kV (PbFree) Tape & Reel IEC 6100042 Air (ESD) ESD 15 kV For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specification assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: November, 2017 Rev. 1 ESD5102/DESD5102 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 3.3 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 3.68 5 6.5 V BR T Reverse Leakage Current I V = 3.3 V, I/O Pin to GND 0.1 A R RWM Clamping Voltage V 5.4 V C I = 8 A IEC 6100042 Level 2 equivalent PP TLP (Note 1) (4 kV Contact, 4 kV Air) I = 16 A 6.5 PP IEC 6100042 Level 2 equivalent (8 kV Contact, 15 kV Air) Junction Capacitance C V = 0 V, f = 1 MHz 5.5 pF J R 1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 30 5 25 0 20 5 15 10 10 15 5 20 0 25 5 30 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. ESD Clamping Voltage +8 kV Contact Figure 2. ESD Clamping Voltage 8 kV Contact per IEC6100042 per IEC6100042 www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)