ESD7016, SZESD7016 ESD Protection Diode Low Capacitance, USB 3.0 The ESD7016 surge protection is specifically designed to protect USB3.0 interfaces by integrating two Superspeed pairs, D+, D, and Vbus lines into a single protection product. Ultralow capacitance and www.onsemi.com low ESD clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines. The flowthrough MARKING style package allows for easy PCB layout and matched trace lengths DIAGRAM necessary to maintain consistent impedance between high speed UDFN8 differential lines. 6M M CASE 517CB 1 Features Low Capacitance (0.15 pF Typical, I/O to GND) 6M = Specific Device Code M = Date Code Protection for the Following IEC Standards: = PbFree Package IEC 6100042 (Level 4) (Note: Microdot may be in either location) Low ESD Clamping Voltage SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PIN CONFIGURATION AND SCHEMATIC PPAP Capable This is a PbFree Device I/O 1 Typical Applications I/O 2 USB 3.0 Vbus or Ground N/C I/O 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) J I/O 4 Rating Symbol Value Unit N/C Operating Junction Temperature Range T 55 to +125 C J I/O 5 Storage Temperature Range T 55 to +150 C stg I/O 6 Lead Solder Temperature T 260 C L Maximum (10 Seconds) IEC 6100042 Contact (ESD) ESD 15 kV IEC 6100042 Air (ESD) ESD 15 kV ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. ESD7016MUTAG UDFN8 3000 / Tape & (PbFree) Reel SZESD7016MUTAG UDFN8 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2017 Rev. 4 ESD7016/DESD7016, SZESD7016 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 5.0 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 5.5 V BR T Reverse Leakage Current I V = 5 V, I/O Pin to GND 1.0 A R RWM Clamping Voltage (Note 1) V I = 1 A, I/O Pin to GND (8 x 20 s pulse) 10 V C PP Clamping Voltage (Note 2) V IEC6100042, 8 kV Contact See Figures 1 and 2 V C Clamping Voltage V I = 8 A 14.6 C PP TLP (Note 3) I = 16 A 20.5 PP See Figures 6 through 9 Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.15 0.20 pF J R Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.03 pF J R Difference 1. Surge current waveform per Figure 5. 2. For test procedure see Figures 3 and 4 and application note AND8307/D. 3. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 90 0 80 10 70 20 60 30 50 40 40 50 30 60 20 70 10 80 0 90 10 100 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. IEC6100042 +8 KV Contact Figure 2. IEC6100042 8 KV Contact Clamping Voltage Clamping Voltage www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)