ESD Protection Diode MicroPackaged Diodes for ESD Protection ESD7571, SZESD7571 The ESD7571 is designed to protect voltage sensitive components that require ultra-low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, high breakdown voltage, high linearity, low leakage, and fast response time www.onsemi.com make these parts ideal for ESD protection on designs where board space is at a premium. It has industry leading capacitance linearity over voltage making it ideal for RF applications. This capacitance linearity combined with the extremely small package and low insertion loss makes this part well suited for use in antenna line applications for wireless handsets and terminals. MARKING Features DIAGRAM Industry Leading Capacitance Linearity Over Voltage X2DFN2 UltraLow Capacitance: 0.35 pF Max D M CASE 714AB Standoff Voltage: 5.3 V Low Leakage: < 1 nA D = Specific Device Code M = Date Code Low Dynamic Resistance: < 1 IEC6100042 Level 4 ESD Protection X2DFNW2 1000 ESD IEC6100042 Strikes 8 kV Contact / Air Discharged J M CASE 711BG SZESD7571MXWT5G Wettable Flank Package for Optimal Automated Optical Inspection (AOI) J = Specific Device Code SZ Prefix for Automotive and Other Applications Requiring Unique M = Date Code Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS ORDERING INFORMATION Compliant Typical Applications Device Package Shipping RF Signal ESD Protection ESD7571N2T5G X2DFN2 8000 / Tape & RF Switching, PA, and Antenna ESD Protection (PbFree) Reel Near Field Communications SZESD7571N2T5G X2DFN2 8000 / Tape & USB 2.0, USB 3.0 (PbFree) Reel SZESD7571MXWT5G X2DFNW2 8000 / Tape & MAXIMUM RATINGS (T = 25C unless otherwise noted) A (PbFree) Reel Rating Symbol Value Unit For information on tape and reel specifications, IEC 6100042 Contact (ESD) (Note 1) ESD 20 KV including part orientation and tape sizes, please IEC 6100042 Air (ESD) (Note 1) ESD 20 kV refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. IEC 6100045 (ESD) (Note 2) ESD 2.2 A Total Power Dissipation (Note 3) T = 25C P 300 mW A D Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to C J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. At least 10 discharges at T = 25C, per IEC6100042 waveform. A 2. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A 3. Mounted with recommended minimum pad size, DC board FR4 Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2020 Rev. 3 ESD7571/DESD7571, SZESD7571 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage V 5.3 V RWM Breakdown Voltage V I = 1 mA (Note 4) 7.0 V BR T Reverse Leakage Current I V = 5.3 V < 1 50 nA R RWM Clamping Voltage V I = 1 A (Note 5) 13 15 V C PP Junction Capacitance C V = 0 V, f = 1 MHz 0.24 0.35 pF J R V = 0 V, f = 1 GHz 0.24 0.35 R Dynamic Resistance R TLP Pulse 0.8 DYN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 5. Nonrepetitive current pulse at 25C, per IEC6100045 waveform. TYPICAL CHARACTERISTICS 120 20 100 0 20 80 40 60 60 40 80 20 100 0 20 120 25 0 25 50 75 100 125 150 25 0 25 50 75 100 125 150 TIME (ns) TIME (ns) Figure 1. Typical IEC6100042 + 8 kV Contact Figure 2. Typical IEC6100042 8 kV Contact ESD Clamping Voltage ESD Clamping Voltage www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)