ESD Protection Diode, Ultra-Low Capacitance ESD9P5.0ST5G The ESD9P Series is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low www.onsemi.com leakage, and fast response time, make these parts ideal for ESD protection on designs that utilize highspeed lines such as USB. 12 Specification Features: PIN 1. CATHODE Low Capacitance 1.3 pF 2. ANODE Low Clamping Voltage Small Body Outline Dimensions: 2 0.039 x 0.024 (1.00 mm x 0.60 mm) Low Body Height: 0.016 (0.4 mm) 1 Standoff Voltage: 5 V SOD923 Low Leakage CASE 514AB Response Time is Typically < 1.0 ns IEC6100042 Level 4 ESD Protection MARKING DIAGRAM AECQ101 Qualified These Devices are PbFree and are RoHS Compliant 12T M Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic T = Specific Device Code Epoxy Meets UL 94 V0 M = Date Code LEAD FINISH: 100% Matte Sn (Tin) *Date Code orientation and/or position may MOUNTING POSITION: Any vary depending upon manufacturing location. QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping Rating Symbol Value Unit ESD9P5.0ST5G SOD923 8000/Tape & Reel IEC 6100042 (ESD) Contact 10 kV (PbFree) Air 15 For information on tape and reel specifications, Total Power Dissipation on FR5 Board P 150 mW D including part orientation and tape sizes, please (Note 1) T = 25C refer to our Tape and Reel Packaging Specifications A Brochure, BRD8011/D. Junction and Storage Temperature Range T , T 55 to C J stg +150 DEVICE MARKING INFORMATION Lead Solder Temperature Maximum T 260 C L (10 Second Duration) See specific marking information in the device marking column of the Electrical Characteristics tables starting on Stresses exceeding those listed in the Maximum Ratings table may damage the page 2 of this data sheet. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: November, 2019 Rev. 3 ESD9P5.0S/DESD9P5.0ST5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A I Symbol Parameter I F I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM I Maximum Reverse Leakage Current V V R RWM I V R F I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional Surge Protector C Max. Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.0 V Max. I = 10 mA for all types) A F F V (V) C V V (V) I I ( A) I = 1 A RWM R BR T PP (V) V (Note 2) I C (pF) (Note 4) V RWM T C Per IEC6100042 Device (Note 3) Marking Max Max Min mA Max Max Device ESD9P5.0ST5G T 5.0 1.0 5.8 1.0 1.3 9.8 Figures1and 2 See Below *Other voltages available upon request. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 4. Surge current waveform per Figure 5. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2