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V = 10 V, I = 18 A The SupreMOS MOSFET is Fairchild Semiconductors next DS(on) GS D generation of high voltage super-junction (SJ) technology Ultra Low Gate Charge (Typ. Qg = 86 nC) employing a deep trench filling process that differentiates it from Low Effective Output Capacitance (Typ. C = 361 pF) oss(eff.) the conventional SJ MOSFETs. This advanced technology and 100% Avalanche Tested precise process control provides lowest Rsp on-resistance, RoHS Compliant superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power con- verter applications such as PFC, server/telecom power, FPD TV Applications power, ATX power, and industrial power applications. Solar Inverter AC-DC Power Supply D D G G 2 S D -PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCB36N60N Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 36 C I Drain Current A D o - Continuous (T = 100 C) 22.7 C I Drain Current - Pulsed (Note 1) 108 A DM E Single Pulsed Avalanche Energy (Note 2) 1800 mJ AS I Avalanche Current (Note 1) 12 A AR E Repetitive Avalanche Energy (Note 1) 3.12 mJ AR MOSFET dv/dt 100 V/ns dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 312 W C P Power Dissipation D o o - Derate Above 25C2.6W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter FCB36N60N Unit R Thermal Resistance, Junction to Case, Max. 0.4 JC 2 o R Thermal Resistance, Junction to Ambient (1 in Pad of 2-oz Copper), Max. 40 C/W JA R Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 62.5 JA 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCB36N60N Rev. 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