FCP190N60 ON Semiconductor

FCP190N60 electronic component of ON Semiconductor
FCP190N60 ON Semiconductor
FCP190N60 MOSFETs
FCP190N60  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of FCP190N60 MOSFETs across the USA, India, Europe, Australia, and various other global locations. FCP190N60 MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.FCP190N60
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:MOSFET 600V N-Channel MOSFET SuperFET II
Datasheet:FCP190N60 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
800: USD 1.8025 ea
Line Total: USD 1442 
Availability : 0
  
QtyUnit Price
800$ 1.8025
1000$ 1.5288
2500$ 1.47
5000$ 1.4664
  

Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 800
Multiples : 1
QtyUnit Price
800$ 1.8025
1000$ 1.5288
2500$ 1.47
5000$ 1.4664


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.7913
10$ 2.4534
50$ 2.2424
100$ 2.0273
500$ 1.9283
1000$ 1.8875


Availability0
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 8.5151
10$ 3.0723
25$ 2.8997
100$ 2.52
500$ 2.1402
800$ 1.8066


Availability0
Ship by Tue. 23 Jun to Mon. 29 Jun
MOQ : 23
Multiples : 1
QtyUnit Price
23$ 4.1793
25$ 3.8433
50$ 3.4589
100$ 3.4349

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FCP190N60 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FCP190N60 and other electronic components in the MOSFETs category and beyond.

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET December 2014 FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 170 m DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 57 nC) g and lower gate charge performance. This technology is tailored Low Effective Output Capacitance (Typ. C = 160 pF) to minimize conduction loss, provide superior switching perfor- oss(eff.) mance, dv/dt rate and higher avalanche energy. Consequently, 100% Avalanche Tested SuperFET II MOSFET is very suitable for the switching power RoHS Compliant applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Applications LCD / LED / PDP TV Lighting Solar Inverter AC-DC Power Supply D G G D G S D TO-220 TO-220F S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP190N60 FCPF190N60 Unit V Drain to Source Voltage 600 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C) 20.2 20.2* C I Drain Current A D o - Continuous (T = 100 C) 12.7 12.7* C I Drain Current - Pulsed (Note 1) 60.6 60.6* A DM E Single Pulsed Avalanche Energy (Note 2) 400 mJ AS I Avalanche Current (Note 1) 4.0 A AR E Repetitive Avalanche Energy (Note 1) 2.1 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 208 39 W C P Power Dissipation D o o - Derate Above 25C1.670.31W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Unit FCP190N60 FCPF190N60 R Thermal Resistance, Junction to Case, Max. 0.6 3.2 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCP190N60 / FCPF190N60 Rev. C18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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