X-On Electronics has gained recognition as a prominent supplier of FCP190N60 mosfet across the USA, India, Europe, Australia, and various other global locations. FCP190N60 mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

FCP190N60 ON Semiconductor

FCP190N60 electronic component of ON Semiconductor
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Part No.FCP190N60
Manufacturer: ON Semiconductor
Category:MOSFET
Description: MOSFET 600V N-Channel MOSFET SuperFET II
Datasheet: FCP190N60 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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800: USD 1.6737 ea
Line Total: USD 1338.96

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Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
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Hts Code
Mxhts
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET December 2014 FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 170 m DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 57 nC) g and lower gate charge performance. This technology is tailored Low Effective Output Capacitance (Typ. C = 160 pF) to minimize conduction loss, provide superior switching perfor- oss(eff.) mance, dv/dt rate and higher avalanche energy. Consequently, 100% Avalanche Tested SuperFET II MOSFET is very suitable for the switching power RoHS Compliant applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Applications LCD / LED / PDP TV Lighting Solar Inverter AC-DC Power Supply D G G D G S D TO-220 TO-220F S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP190N60 FCPF190N60 Unit V Drain to Source Voltage 600 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C) 20.2 20.2* C I Drain Current A D o - Continuous (T = 100 C) 12.7 12.7* C I Drain Current - Pulsed (Note 1) 60.6 60.6* A DM E Single Pulsed Avalanche Energy (Note 2) 400 mJ AS I Avalanche Current (Note 1) 4.0 A AR E Repetitive Avalanche Energy (Note 1) 2.1 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 208 39 W C P Power Dissipation D o o - Derate Above 25C1.670.31W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter Unit FCP190N60 FCPF190N60 R Thermal Resistance, Junction to Case, Max. 0.6 3.2 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCP190N60 / FCPF190N60 Rev. C18

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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