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FCP190N60 GF102 N-Channel SuperFET II MOSFET December 2013 FCP190N60 GF102 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m Features Description 650 V T = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-new J high voltage super-junction (SJ) MOSFET family that is utilizing Typ. R = 170 m DS(on) charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Q = 57 nC) g and lower gate charge performance. This technology is tailored Low Effective Output Capacitance (Typ. C = 160 pF) to minimize conduction loss, provide superior switching perfor- oss(eff.) mance, dv/dt rate and higher avalanche energy. Consequently, 100% Avalanche Tested SuperFET II MOSFET is very suitable for the switching power RoHS Compliant applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Application LCD / LED / PDP TV Lighting Solar Inverter AC-DC Power Supply D G G D S TO-220 S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP190N60 GF102 Unit V Drain to Source Voltage 600 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C) 20.2 C I Drain Current A D o - Continuous (T = 100 C) 12.7 C I Drain Current - Pulsed (Note 1) 60.6 A DM E Single Pulsed Avalanche Energy (Note 2) 400 mJ AS I Avalanche Current (Note 1) 4.0 A AR E Repetitive Avalanche Energy (Note 1) 2.1 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 208 W C P Power Dissipation D o o - Derate Above 25C1.67W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter Unit FCP190N60 GF102 R Thermal Resistance, Junction to Case, Max. 0.6 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCP190N60 GF102 Rev. C1