FCP190N65S3R0 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 17 A, 190 m Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize 650 V 190 m 10 V 17 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier D design implementation. Features 700 V T = 150C J G Typ. R = 159 m DS(on) Ultra Low Gate Charge (Typ. Q = 33 nC) g S Low Effective Output Capacitance (Typ. C = 300 pF) oss(eff.) POWER MOSFET 100% Avalanche Tested These Devices are PbFree and are RoHS Compliant Applications Computing / Display Power Supplies G Telecom / Server Power Supplies D S Industrial Power Supplies TO220 Lighting / Charger / Adapter CASE 340AT MARKING DIAGRAM Y&Z&3&K FCP190 N65S3R0 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FCP190N65S3R0 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2019 Rev. 4 FCP190N65S3R0/DFCP190N65S3R0 ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise specified) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 V I Drain Current Continuous (T = 25C) 17 A D C Continuous (T = 100C) 11 C I Drain Current Pulsed (Note 1) 42.5 A DM E Single Pulsed Avalanche Energy (Note 2) 76 mJ AS I Avalanche Current (Note 1) 2.5 A AS E Repetitive Avalanche Energy (Note 1) 1.44 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 20 P Power Dissipation (T = 25C) 144 W D C Derate Above 25C 1.15 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 s 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. I = 2.5 A, R = 25 , starting T = 25C. AS G J 3. I 8.5 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.87 C/W JC R Thermal Resistance, Junction to Ambient, Max. 62.5 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity FCP190N65S3R0 FCP190N65S3R0 TO220 Tube N/A N/A 50 Units www.onsemi.com 2