Product Information

FCPF22N60NT

FCPF22N60NT electronic component of ON Semiconductor

Datasheet
MOSFET 600V N-Channel SupreMOS

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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FCPF22N60NT
ON Semiconductor

1 : USD 10.088
10 : USD 8.7387
100 : USD 7.1605
500 : USD 6.0956
1000 : USD 5.8419
N/A

Obsolete
0 - WHS 2

MOQ : 1000
Multiples : 1000

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FCPF22N60NT
ON Semiconductor

1000 : USD 2.3865
N/A

Obsolete
0 - WHS 3

MOQ : 131
Multiples : 131

Stock Image

FCPF22N60NT
ON Semiconductor

131 : USD 3.3396
N/A

Obsolete
0 - WHS 4

MOQ : 100
Multiples : 100

Stock Image

FCPF22N60NT
ON Semiconductor

100 : USD 3.5505
250 : USD 3.2269
N/A

Obsolete
0 - WHS 5

MOQ : 1
Multiples : 1

Stock Image

FCPF22N60NT
ON Semiconductor

1 : USD 4.6166
10 : USD 4.0464
30 : USD 3.9409
100 : USD 3.8355
500 : USD 3.7902
1000 : USD 3.7324
N/A

Obsolete
0 - WHS 6

MOQ : 1
Multiples : 1

Stock Image

FCPF22N60NT
ON Semiconductor

1 : USD 9.3008
10 : USD 6.5938
25 : USD 6.2336
100 : USD 5.1947
250 : USD 5.0615
500 : USD 4.4221
1000 : USD 3.7162
2000 : USD 3.503
5000 : USD 3.3832
N/A

Obsolete
0 - WHS 7

MOQ : 19
Multiples : 1

Stock Image

FCPF22N60NT
ON Semiconductor

19 : USD 3.9528
25 : USD 3.6796
50 : USD 3.6061
N/A

Obsolete
0 - WHS 8

MOQ : 1000
Multiples : 1000

Stock Image

FCPF22N60NT
ON Semiconductor

1000 : USD 3.0643
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FCP22N60N / FCPF22N60NT N-Channel SupreMOS MOSFET November 2013 FCP22N60N / FCPF22N60NT N-Channel SupreMOS MOSFET 600 V, 22 A, 165 m Features Description o BV > 650 V T = 150 C The SupreMOS MOSFET is Fairchild Semiconductors next DSS J generation of high voltage super-junction (SJ) technology R = 140 m (Typ.) V = 10 V, I = 11 A DS(on) GS D employing a deep trench filling process that differentiates it from Ultra Low Gate Charge (Typ. Q = 45 nC) g the conventional SJ MOSFETs. This advanced technology and Low Effective Output Capacitance (Typ. C = 196.4 pF) oss(eff.) precise process control provides lowest Rsp on-resistance, 100% Avalanche Tested superior switching performance and ruggedness. SupreMOS RoHS Compliant MOSFET is suitable for high frequency switching power con- verter applications such as PFC, server/telecom power, FPD TV Application power, ATX power, and industrial power applications. LCD/LED/PDP TV Lighting Solar Inverter AC-DC Power Supply D G G D G S D TO-220 TO-220F S S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCP22N60N FCPF22N60NT Unit V Drain to Source Voltage 600 V DSS V Gate to Source Voltage 45 V GSS o - Continuous (T = 25 C) 22 22* C I Drain Current A D o - Continuous (T = 100 C) 13.8 13.8* C I Drain Current - Pulsed (Note 1) 66 66* A DM E Single Pulsed Avalanche Energy (Note 2) 672 mJ AS I Avalanche Current (Note 1) 7.3 A AR E Repetitive Avalanche Energy (Note 1) 2.75 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 205 39 W C P Power Dissipation D o o - Derate Above 25 C 1.64 0.31 W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds T 300 C L *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FCP22N60N FCPF22N60NT Unit R Thermal Resistance, Junction to Case, Max. 0.61 3.2 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 JA 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FCP22N60N / FCPF22N60NT Rev. C1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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