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SuperFET II MOSFET is Fairchild Semiconductors brand-new DS(on) high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Q = 11 nC) g charge balance technology for outstanding low on-resistance Low E (Typ. 1.1 uJ 400V) oss and lower gate charge performance. This technology is tailored Low Effective Output Capacitance (Typ. C = 51 pF) to minimize conduction loss, provide superior switching oss(eff.) performance, dv/dt rate and higher avalanche energy. Conse- 100% Avalanche Tested quently, SuperFET II MOSFET is very suitable for the switch- RoHS Complian ing power applications such as Audio, Laptop adapter, ESD Improved Capability Linghting, ATX power and industrial power applications. Applications AC - DC Power Supply LED Lighting D G G D S I-PAK S o Absolute Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FCU2250N80Z Unit V Drain to Source Voltage 800 V DSS - DC 20 V Gate to Source Voltage V GSS - AC (f > 1 Hz) 30 o - Continuous (T = 25 C) 2.6 C I Drain Current A D o - Continuous (T = 100 C) 1.7 C I Drain Current - Pulsed (Note 1) 6.5 A DM E Single Pulsed Avalanche Energy (Note 2) 21.6 mJ AS I Avalanche Current (Note 1) 0.52 A AR E Repetitive Avalanche Energy (Note 1) 0.39 mJ AR MOSFET dv/dt 100 dv/dt V/ns Peak Diode Recovery dv/dt (Note 3) 20 o (T = 25 C) 39 W C P Power Dissipation D o o - Derate Above 25C0.31W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o Maximum Lead Temperature for Soldering,1/8 from Case for 5 Seconds T 300 C L Thermal Characteristics Symbol Parameter FCU2250N80Z Unit R Thermal Resistance, Junction to Case, Max. 3.2 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 100 JA 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FCU2250N80Z Rev. C0