TM FDB12N50F N-Channel UniFET FRFET MOSFET November 2013 FDB12N50F TM N-Channel UniFET FRFET MOSFET 500 V, 11.5 A, 700 m Features Description TM R = 590 m (Typ.) V = 10 V, I = 6 A UniFET MOSFET is Fairchild Semiconductors high voltage DS(on) GS D MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 21 nC) This MOSFET is tailored to reduce on-state resistance, and to Low C (Typ. 11 pF) rss provide better switching performance and higher avalanche energy strength. The body diodes reverse recovery perfor- 100% Avalanche Tested mance of UniFET FRFET MOSFET has been enhanced by Improve dv/dt Capability lifetime control. Its t is less than 100nsec and the reverse dv/dt rr RoHS Compliant immunity is 15V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain Applications applications in which the performance of MOSFETs body diode Lighting is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), Uninterruptible Power Supply flat panel display (FPD) TV power, ATX and electronic lamp bal- AC-DC Power Supply lasts. D D G G 2 S D -PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDB12N50FTM WS Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 11.5 C I Drain Current A D o - Continuous (T = 100 C) 6.9 C I Drain Current - Pulsed (Note 1) 46 A DM E Single Pulsed Avalanche Energy (Note 2) 456 mJ AS I Avalanche Current (Note 1) 11.5 A AR E Repetitive Avalanche Energy (Note 1) 16.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 165 W C P Power Dissipation D o o - Derate above 25C1.33W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQB12N50FTM WS Unit R Thermal Resistance, Junction to Case, Max 0.75 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. 40 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDB12N50F Rev. C1TM FDB12N50F N-Channel UniFET FRFET MOSFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDB12N50F FDB12N50FTM WS D2-PAK 330mm 24mm 800 units o Electrical Characteristics T = 25 C unless otherwise noted. C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics o BV Drain to Source Breakdown Voltage I = 250A, V = 0V, T = 25 C 500 - - V DSS D GS J BV Breakdown Voltage Temperature DSS o o I = 250A, Referenced to 25C- 0.5 - V/ C D / T Coefficient J V = 500V, V = 0V - - 10 DS GS I Zero Gate Voltage Drain Current A DSS o V = 400V, T = 125 C - - 100 DS C I Gate to Body Leakage Current V = 30V, V = 0V - - 100 nA GSS GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A3.0-5.0V GS(th) GS DS D R Static Drain to Source On Resistance V = 10V, I = 6A - 0.59 0.7 DS(on) GS D g Forward Transconductance V = 40V, I = 6A - 12 - S FS DS D Dynamic Characteristics C Input Capacitance - 1050 1395 pF iss V = 25V, V = 0V DS GS C Output Capacitance - 135 180 pF oss f = 1MHz C Reverse Transfer Capacitance - 11 17 pF rss Q Total Gate Charge at 10V -21 30 nC g(tot) V = 400V, I = 11.5A Q Gate to Source Gate Charge DS D - 6 - nC gs V = 10V GS Q Gate to Drain Miller Charge - 9 - nC gd (Note 4) Switching Characteristics t Turn-On Delay Time -21 50 ns d(on) V = 250V, I = 11.5A t Turn-On Rise Time DD D - 45 100 ns r R = 25 G t Turn-Off Delay Time - 50 110 ns d(off) t Turn-Off Fall Time (Note 4) - 35 80 ns f Drain-Source Diode Characteristics I Maximum Continuous Drain to Source Diode Forward Current - - 11.5 A S I Maximum Pulsed Drain to Source Diode Forward Current - - 46 A SM V Drain to Source Diode Forward Voltage V = 0V, I = 11.5A - - 1.5 V SD GS SD t Reverse Recovery Time - 134 - ns V = 0V, I = 11.5A rr GS SD dI /dt = 100A/s Q Reverse Recovery Charge - 0.37 - C F rr Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 6.9mH, I = 11.5A, V = 50V, R = 25 , Starting T = 25 C AS DD G J 3. I 11.5A, di/dt 200A/s, V BV , Starting T = 25 C SD DD DSS J 4. Essentially Independent of Operating Temperature Typical Characteristics 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 FDB12N50F Rev. C1